公开(公告)号：US09607809B2

公开(公告)日：2017-03-28

申请号：US14207468

申请日：2014-03-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ching Lo ,  Po-Hsiung Leu ,  Tzu-Chun Lin ,  Ding-I Liu ,  Jen-Chi Chang ,  Ho-Ta Chuang

IPC: C23C16/00 ,  H01J37/32 ,  C23C16/507

CPC classification number: H01J37/321 ,  C23C16/507 ,  H01J37/3211

Abstract: A plasma reactor includes an enclosure having a top and a bottom and defining a processing chamber. Inlets are formed in the enclosure for injecting process gas into the chamber. An outlet is formed in the enclosure for withdrawing gas from the chamber. A platform is positioned to support a wafer in the chamber above the bottom. A plurality of coils is positioned above the top of the chamber. Each coil is coupled to a radio frequency generator.