Invention Grant
- Patent Title: Pattern-forming method and resist underlayer film-forming composition
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Application No.: US14249432Application Date: 2014-04-10
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Publication No.: US09607849B2Publication Date: 2017-03-28
- Inventor: Kazuhiko Koumura , Shinya Minegishi , Takashi Mori , Kyoyu Yasuda , Yoshio Takimoto , Shinya Nakafuji , Toru Kimura
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-225381 20111012; JP2011-229297 20111018
- Main IPC: G03F7/09
- IPC: G03F7/09 ; G03F7/20 ; H01L21/027 ; H01L21/308 ; H01L21/311 ; H01L21/02 ; H01L21/033
Abstract:
A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.
Public/Granted literature
- US20140220783A1 PATTERN-FORMING METHOD AND RESIST UNDERLAYER FILM-FORMING COMPOSITION Public/Granted day:2014-08-07
Information query
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