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    Resist pattern-forming method
    3.
    发明授权
    Resist pattern-forming method 有权
    抗蚀图案形成方法

    公开(公告)号：US08993223B2

    公开(公告)日：2015-03-31

    申请号：US14158160

    申请日：2014-01-17

    Applicant: JSR Corporation

    Inventor： Yusuke Anno ,  Takashi Mori ,  Hirokazu Sakakibara ,  Taiichi Furukawa ,  Kazunori Takanashi ,  Hiromitsu Tanaka ,  Shin-ya Minegishi

    IPC: G03F7/26 ,  G03F7/20 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/32

    CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

    Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

    Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

    Method for forming pattern, and polysiloxane composition
    5.
    发明授权
    Method for forming pattern, and polysiloxane composition 有权
    形成图案的方法和聚硅氧烷组合物

    公开(公告)号：US09434609B2

    公开(公告)日：2016-09-06

    申请号：US13629908

    申请日：2012-09-28

    Applicant: JSR CORPORATION

    Inventor： Satoshi Dei ,  Takashi Mori ,  Kazunori Takanashi

    IPC: B81C1/00 ,  C08G77/388 ,  G03F7/075 ,  G03F7/004 ,  G03F7/09 ,  G03F7/11 ,  H05K3/06 ,  C08G77/14 ,  C08G77/24 ,  C09D183/08

    CPC classification number: B81C1/00396 ,  B81C1/00388 ,  B81C2201/0198 ,  C08G77/14 ,  C08G77/24 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/11 ,  H05K3/061 ,  H05K2203/05

    Abstract: A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator.

    Abstract translation: 在多层抗蚀剂工艺中，可以在多层抗蚀剂工艺中一起改进其中利用氟气蚀刻含硅膜和耐氧蚀性的可加工性的图案形成方法，以形成更精细的图案。 提供了一种图案形成方法，其包括以下步骤：（1）使用聚硅氧烷组合物在待处理基板的上表面上提供含硅膜; （2）在含硅膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模对含硅膜进行干蚀刻以形成含硅图案; 和（4）使用含硅图案作为掩模对待处理的基板进行干蚀刻以形成其中聚硅氧烷组合物包含（A）含氟原子的聚硅氧烷和（B）交联促进剂的图案。

    Polysiloxane composition and pattern-forming method
    7.
    发明授权
    Polysiloxane composition and pattern-forming method 有权
    聚硅氧烷组合物和图案形成方法

    公开(公告)号：US09329478B2

    公开(公告)日：2016-05-03

    申请号：US13739375

    申请日：2013-01-11

    Applicant: JSR CORPORATION

    Inventor： Yusuke Anno ,  Takashi Mori ,  Satoshi Dei ,  Kazunori Takanashi ,  Yushi Matsumura ,  Shin-ya Minegishi

    IPC: G03F7/20 ,  G03F7/075 ,  G03F7/09 ,  H01L21/02 ,  C08K5/34

    CPC classification number: G03F7/0757 ,  C08K5/34 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/20 ,  H01L21/02126 ,  H01L21/02216 ,  C08L83/04

    Abstract: A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.

    Abstract translation: 聚硅氧烷组合物包括聚硅氧烷和第一化合物。 第一化合物包括含氮杂环结构，极性基团，酯基或其组合。 图案形成方法包括将聚硅氧烷组合物涂覆在待加工的基材上以提供含硅膜。 将抗蚀剂组合物涂覆在含硅膜上以提供抗蚀剂涂膜。 通过光掩模选择性地用放射线照射抗蚀剂涂膜以暴露抗蚀剂涂膜。 曝光的抗蚀剂涂层被显影以形成抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次对含硅膜和待处理基板进行干蚀刻。

    Method for forming resist pattern, and composition for forming resist underlayer film
    8.
    发明授权
    Method for forming resist pattern, and composition for forming resist underlayer film 有权
    形成抗蚀剂图案的方法和用于形成抗蚀剂下层膜的组合物

    公开(公告)号：US08956807B2

    公开(公告)日：2015-02-17

    申请号：US13630245

    申请日：2012-09-28

    Applicant: JSR Corporation

    Inventor： Hiromitsu Tanaka ,  Kazunori Takanashi ,  Shinya Minegishi ,  Takashi Mori ,  Tomoaki Seko ,  Jyunya Suzuki

    IPC: G03F7/11 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32

    CPC classification number: G03F7/11 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/091 ,  G03F7/325

    Abstract: A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.

    Abstract translation: 一种抗蚀剂图案形成方法，其能够形成在多层抗蚀剂工艺中用有机溶剂显影的情况下图案抗塌陷性优异的抗蚀剂图案。 该方法具有以下步骤：（1）使用形成抗蚀剂下层膜的组合物在基板上形成抗蚀剂下层膜; （2）使用光致抗蚀剂组合物在抗蚀剂下层膜上提供抗蚀剂膜; （3）曝光抗蚀膜; （4）使用含有不少于80质量％的有机溶剂的显影剂溶液显影曝光的抗蚀剂膜，其中形成抗蚀剂下层膜的组合物含有（A）包含聚硅氧烷链的组分，并且具有 羧基，可以通过酸，酸酐基或其组合产生羧基的基团。

    Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition
    9.
    发明授权
    Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition 有权
    多层抗蚀剂工艺图案形成方法和多层抗蚀剂工艺无机成膜组合物

    公开(公告)号：US08927201B2

    公开(公告)日：2015-01-06

    申请号：US14038861

    申请日：2013-09-27

    Applicant: JSR Corporation

    Inventor： Kazunori Takanashi ,  Yoshio Takimoto ,  Takashi Mori ,  Kazuo Nakahara ,  Masayuki Motonari

    IPC: G03F7/26 ,  G03F7/11

    CPC classification number: G03F7/11 ,  G03F7/0002 ,  G03F7/094 ,  G03F7/26

    Abstract: A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.

    Abstract translation: 多层抗蚀剂工艺图案形成方法包括在衬底上提供无机膜。 在无机膜上设置保护膜。 在保护膜上设置抗蚀剂图案。 通过利用抗蚀剂图案作为掩模的蚀刻在衬底上提供图案。 多层抗蚀剂工艺无机成膜组合物包括化合物，有机溶剂和交联促进剂。 该化合物包括包含可水解基团的金属化合物，包含可水解基团的金属化合物的水解产物，包含可水解基团的金属化合物的水解缩合产物或其组合。 该化合物包括属于元素周期表第6族，第12族或第13族的至少一种金属元素。

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