公开(公告)号：US20140371466A1

公开(公告)日：2014-12-18

申请号：US14477306

申请日：2014-09-04

Applicant: JSR Corporation

Inventor： Yushi Matsumura ,  Shinya Minegishi ,  Satoru Murakami ,  Yusuke Anno ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Kyoyu Yasuda

IPC: G03F7/027 ,  G03F7/004

CPC classification number: G03F7/027 ,  B44C1/22 ,  C07D407/12 ,  C07D487/04 ,  G03F7/004 ,  G03F7/11 ,  H05K1/00

Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

Abstract translation: 提供一种能够形成能够形成抗蚀剂下层膜的图案的方法，该方法能够在保持耐蚀刻性的同时使用碱液容易地除去。 本发明提供一种形成图案的方法，该方法包括：（1）使用含有具有可碱解官能团的化合物的形成抗蚀剂下层膜的组合物在基材上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模，通过干蚀刻抗蚀剂下层膜和基板在基板上形成图案; 和（4）用碱液除去抗蚀剂下层膜。

公开(公告)号：US08871432B2

公开(公告)日：2014-10-28

申请号：US13852120

申请日：2013-03-28

Applicant: JSR Corporation

Inventor： Shin-ya Minegishi ,  Satoru Murakami ,  Yushi Matsumura ,  Kazuhiko Komura ,  Yoshio Takimoto ,  Shin-ya Nakafuji ,  Kyoyu Yasuda

IPC: G03F7/26 ,  G03F7/004 ,  G03F7/11 ,  G03F7/40 ,  G03F7/09 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06

CPC classification number: G03F7/004 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  G03F7/40

Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Abstract translation: 图案形成方法包括：（1）抗蚀剂下层膜形成步骤，通过涂布含有酚羟基的树脂的抗蚀剂下层膜形成组合物，在基材的上表面侧上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜的上表面侧形成抗蚀剂图案的抗蚀剂图案形成工序; （3）借助于抗蚀剂图案作为掩模，至少对抗蚀剂下层膜和基板进行干蚀刻的图案形成步骤，以在基板上形成图案; 以及（4）以（1）〜（4）的顺序用碱性溶液除去基板上的抗蚀剂下层膜的抗蚀剂下层膜除去工序。

公开(公告)号：US09126231B2

公开(公告)日：2015-09-08

申请号：US13685744

申请日：2012-11-27

Applicant: JSR CORPORATION

Inventor： Satoshi Dei ,  Hayato Namai ,  Kyoyu Yasuda ,  Koichi Hasegawa

IPC: G03F7/00 ,  B05D1/32 ,  G03F7/09 ,  H01L21/311 ,  H01L21/033 ,  H01L21/768 ,  C09D183/06 ,  G03F7/039 ,  G03F7/38 ,  G03F7/40

CPC classification number: B05D1/322 ,  C09D183/06 ,  G03F7/0392 ,  G03F7/094 ,  G03F7/38 ,  G03F7/405 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/0337 ,  H01L21/311 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807

Abstract: An insulation pattern-forming method includes forming an organic pattern on a substrate. A space defined by the organic pattern is filled with an insulating material. The organic pattern is removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. An insulation pattern-forming method includes forming a first organic pattern on the substrate. A space defined by the first organic pattern is filled with an insulating material. An upper surface of the first organic pattern is exposed. A second organic pattern that comes in contact with the upper surface of the first organic pattern is formed. A space defined by the second organic pattern is filled with the insulating material. The first organic pattern and the second organic pattern are removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured.

Abstract translation: 绝缘图案形成方法包括在基板上形成有机图案。 由有机图案限定的空间用绝缘材料填充。 去除有机图案以获得由绝缘材料形成的倒置图案。 反转图案被修复。 绝缘图案形成方法包括在基板上形成第一有机图案。 由第一有机图案限定的空间用绝缘材料填充。 暴露第一有机图案的上表面。 形成与第一有机图案的上表面接触的第二有机图案。 由第二有机图案限定的空间用绝缘材料填充。 去除第一有机图案和第二有机图案以获得由绝缘材料形成的倒置图案。 反转图案被修复。

公开(公告)号：US20130084394A1

公开(公告)日：2013-04-04

申请号：US13685744

申请日：2012-11-27

Applicant: JSR CORPORATION

Inventor： Satoshi Dei ,  Hayato Namai ,  Kyoyu Yasuda ,  Koichi Hasegawa

IPC: B05D1/32 ,  C09D183/06

CPC classification number: B05D1/322 ,  C09D183/06 ,  G03F7/0392 ,  G03F7/094 ,  G03F7/38 ,  G03F7/405 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/0337 ,  H01L21/311 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807

Abstract: An insulation pattern-forming method includes forming an organic pattern on a substrate. A space defined by the organic pattern is filled with an insulating material. The organic pattern is removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. An insulation pattern-forming method includes forming a first organic pattern on the substrate. A space defined by the first organic pattern is filled with an insulating material. An upper surface of the first organic pattern is exposed. A second organic pattern that comes in contact with the upper surface of the first organic pattern is formed. A space defined by the second organic pattern is filled with the insulating material. The first organic pattern and the second organic pattern are removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured.

Abstract translation: 绝缘图案形成方法包括在基板上形成有机图案。 由有机图案限定的空间用绝缘材料填充。 去除有机图案以获得由绝缘材料形成的倒置图案。 反转图案被修复。 绝缘图案形成方法包括在基板上形成第一有机图案。 由第一有机图案限定的空间用绝缘材料填充。 暴露第一有机图案的上表面。 形成与第一有机图案的上表面接触的第二有机图案。 由第二有机图案限定的空间用绝缘材料填充。 去除第一有机图案和第二有机图案以获得由绝缘材料形成的倒置图案。 反转图案被修复。

公开(公告)号：US09046769B2

公开(公告)日：2015-06-02

申请号：US14477306

申请日：2014-09-04

Applicant: JSR Corporation

Inventor： Yushi Matsumura ,  Shinya Minegishi ,  Satoru Murakami ,  Yusuke Anno ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Kyoyu Yasuda

IPC: G03F7/027 ,  G03F7/11 ,  B44C1/22 ,  C07D407/12 ,  C07D487/04 ,  H05K1/00 ,  G03F7/004

CPC classification number: G03F7/027 ,  B44C1/22 ,  C07D407/12 ,  C07D487/04 ,  G03F7/004 ,  G03F7/11 ,  H05K1/00

Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

Abstract translation: 提供一种能够形成能够形成抗蚀剂下层膜的图案的方法，该方法能够在保持耐蚀刻性的同时使用碱液容易地除去。 本发明提供一种形成图案的方法，该方法包括：（1）使用含有具有可碱解官能团的化合物的形成抗蚀剂下层膜的组合物在基材上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模，通过干蚀刻抗蚀剂下层膜和基板在基板上形成图案; 和（4）用碱液除去抗蚀剂下层膜。

公开(公告)号：US09607849B2

公开(公告)日：2017-03-28

申请号：US14249432

申请日：2014-04-10

Applicant: JSR CORPORATION

Inventor： Kazuhiko Koumura ,  Shinya Minegishi ,  Takashi Mori ,  Kyoyu Yasuda ,  Yoshio Takimoto ,  Shinya Nakafuji ,  Toru Kimura

IPC: G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033

CPC classification number: H01L21/3081 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/31116 ,  H01L21/31138

Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

公开(公告)号：US08859185B2

公开(公告)日：2014-10-14

申请号：US13948107

申请日：2013-07-22

Applicant: JSR Corporation

Inventor： Shin-ya Minegishi ,  Yushi Matsumura ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Takanori Nakano ,  Satoru Murakami ,  Kyoyu Yasuda ,  Makoto Sugiura

IPC: G03F7/11 ,  G03F7/025 ,  G03F7/09 ,  C08G8/08 ,  C08L61/06

CPC classification number: G03F7/091 ,  C08G8/08 ,  C08L61/06 ,  G03F7/094

Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.

Abstract translation: 抗蚀剂下层膜形成组合物包括含有式（1）所示的重复单元，聚苯乙烯换算的重均分子量为3000〜10,000的聚合物和溶剂。 R 3〜R 8各自独立地表示下述式（2）所示的基团等。 R1表示单键等。 R2表示氢原子等。