- 专利标题: Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques
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申请号: US15017552申请日: 2016-02-05
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公开(公告)号: US09608042B2公开(公告)日: 2017-03-28
- 发明人: Fabio Pellizzer , Giulio Albini , Stephen W. Russell , Max F. Hineman , Sanjay Rangan
- 申请人: INTEL CORPORATION
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L27/24
摘要:
Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a phase-change material layer, a first electrode layer disposed on the phase-change material layer and in direct contact with the phase-change material layer, and a second electrode layer disposed on the first electrode layer and in direct contact with the first electrode layer. Other embodiments may be described and/or claimed.
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