Invention Grant
- Patent Title: Three dimensional memory control circuitry
-
Application No.: US14926401Application Date: 2015-10-29
-
Publication No.: US09620229B2Publication Date: 2017-04-11
- Inventor: Mark Helm , Jung Sheng Hoei , Aaron Yip , Dzung Nguyen
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/26 ; G11C7/18 ; G11C8/14 ; H01L27/02 ; H01L27/06 ; H01L27/105 ; H01L27/11526 ; H01L27/11529 ; H01L27/11556 ; H01L27/11573 ; H01L27/11582 ; G11C5/02 ; G11C5/12 ; G11C7/12 ; G11C13/00 ; G11C16/24

Abstract:
An integrated circuit includes a memory array, a wordline circuit, divided into at least two subcircuits, to control the memory array, and a bitline circuit, divided into at least two subcircuits, to control the memory array. The wordline subcircuits and the bitline subcircuits at least partially overlap separate respective regions of the memory array.
Public/Granted literature
- US20160196879A1 THREE DIMENSIONAL MEMORY CONTROL CIRCUITRY Public/Granted day:2016-07-07
Information query