Invention Grant
- Patent Title: Synthesis and transfer of metal dichalcogenide layers on diverse surfaces
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Application No.: US14193962Application Date: 2014-02-28
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Publication No.: US09637839B2Publication Date: 2017-05-02
- Inventor: Jing Kong , Lain-Jong Li , Yi-Hsien Lee
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Modern Times Legal
- Agent Robert J. Sayre
- Main IPC: C30B25/18
- IPC: C30B25/18 ; C23C16/00 ; C30B29/46 ; C01B31/04 ; B23B9/00 ; H01L23/58

Abstract:
Aromatic molecules are seeded on a surface of a growth substrate; and a layer (e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate.
Public/Granted literature
- US20140245946A1 Synthesis and Transfer of Transition Metal Disulfide Layers on Diverse Surfaces Public/Granted day:2014-09-04
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