- 专利标题: Coaxial hollow cathode plasma assisted directed vapor deposition and related method thereof
-
申请号: US13202828申请日: 2010-02-24
-
公开(公告)号: US09640369B2公开(公告)日: 2017-05-02
- 发明人: Haydn N. G. Wadley , Goesta Mattausch , Henry Morgner , Frank-Holm Roegner
- 申请人: Haydn N. G. Wadley , Goesta Mattausch , Henry Morgner , Frank-Holm Roegner
- 申请人地址: US VA Charlottesville
- 专利权人: University of Virginia Patent Foundation
- 当前专利权人: University of Virginia Patent Foundation
- 当前专利权人地址: US VA Charlottesville
- 代理商 Robert J. Decker
- 国际申请: PCT/US2010/025259 WO 20100224
- 国际公布: WO2010/099218 WO 20100902
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; H01J37/32 ; C23C14/22 ; C23C14/24 ; C23C14/30 ; C23C14/32 ; H01J37/305 ; H01J37/34
摘要:
A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.
公开/授权文献
信息查询
IPC分类: