- 专利标题: Etching apparatus and methods
-
申请号: US14195887申请日: 2014-03-04
-
公开(公告)号: US09640370B2公开(公告)日: 2017-05-02
- 发明人: Oliver James Ansell
- 申请人: SPTS TECHNOLOGIES LIMITED
- 申请人地址: GB Newport
- 专利权人: SPTS Technologies Limited
- 当前专利权人: SPTS Technologies Limited
- 当前专利权人地址: GB Newport
- 代理机构: Volentine & Whitt, PLLC
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01L21/66 ; B81C99/00
摘要:
A method is for etching the whole width of a substrate to expose buried features. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.
公开/授权文献
- US20140174658A1 ETCHING APPARATUS AND METHODS 公开/授权日:2014-06-26
信息查询