-
公开(公告)号：US20130137195A1
公开(公告)日：2013-05-30
申请号：US13674482
申请日：2012-11-12
发明人： Oliver James Ansell
IPC分类号： H01L21/60
CPC分类号： H01J37/32963 , B81C99/0065 , B81C2201/0135 , B81C2201/0142 , H01J37/32972 , H01L22/26
摘要： A method of etching the whole width of a substrate to expose buried features is disclosed. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.
摘要翻译： 公开了一种蚀刻衬底的整个宽度以暴露掩埋特征的方法。 该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。 还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。
-
公开(公告)号：US09640370B2
公开(公告)日：2017-05-02
申请号：US14195887
申请日：2014-03-04
发明人： Oliver James Ansell
CPC分类号： H01J37/32963 , B81C99/0065 , B81C2201/0135 , B81C2201/0142 , H01J37/32972 , H01L22/26
摘要： A method is for etching the whole width of a substrate to expose buried features. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.
-
公开(公告)号：US20140174658A1
公开(公告)日：2014-06-26
申请号：US14195887
申请日：2014-03-04
发明人： Oliver James Ansell
CPC分类号： H01J37/32963 , B81C99/0065 , B81C2201/0135 , B81C2201/0142 , H01J37/32972 , H01L22/26
摘要： A method is for etching the whole width of a substrate to expose buried features. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.
摘要翻译： 一种方法是蚀刻衬底的整个宽度以暴露掩埋的特征。 该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。 还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。
-
公开(公告)号：US08709268B2
公开(公告)日：2014-04-29
申请号：US13674482
申请日：2012-11-12
发明人： Oliver James Ansell
CPC分类号： H01J37/32963 , B81C99/0065 , B81C2201/0135 , B81C2201/0142 , H01J37/32972 , H01L22/26
摘要： A method of etching the whole width of a substrate to expose buried features is disclosed. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.
摘要翻译： 公开了一种蚀刻衬底的整个宽度以暴露掩埋特征的方法。 该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。 还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。
-
-
-
搜索结果
4 条记录 (耗时 0.009 秒)
