A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The high-voltage FinFET device includes: at least one fin structure, a working gate, a shallow trench isolation structure, and a first dummy gate. The fin structure includes a first-type well region and a second-type well region adjacent to the first-type well region, and further includes a first part and a second part. A trench is disposed between the first part and the second part and disposed in the first-type well region. A drain doped layer is disposed on the first part which is disposed in the first-type well region, and a source doped layer is disposed on the second part which is disposed in the second-type well region. The working gate is disposed on the fin structure which is disposed in the first-type well region and in the second-type well region.