- Patent Title: Method and structure of forming FinFET electrical fuse structure
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Application No.: US14984445Application Date: 2015-12-30
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Publication No.: US09647092B2Publication Date: 2017-05-09
- Inventor: Hong He , Juntao Li , Chih-Chao Yang , Yunpeng Yin
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L23/62 ; H01L29/66 ; H01L21/3065 ; H01L21/324 ; H01L21/768 ; H01L27/12 ; H01L29/78
Abstract:
An e-Fuse structure is provided on a surface of an insulator layer of a semiconductor-on-insulator substrate (SOI). The e-Fuse structure includes a first metal semiconductor alloy structure of a first thickness, a second metal semiconductor alloy structure of the first thickness, and a metal semiconductor alloy fuse link is located laterally between and connected to the first and second metal semiconductor alloy structures. The metal semiconductor alloy fuse link has a second thickness that is less than the first thickness.
Public/Granted literature
- US20160315175A1 METHOD AND STRUCTURE OF FORMING FINFET ELECTRICAL FUSE STRUCTURE Public/Granted day:2016-10-27
Information query
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