Invention Grant
- Patent Title: Germanium photodetector with SOI doping source
-
Application No.: US14830870Application Date: 2015-08-20
-
Publication No.: US09647165B2Publication Date: 2017-05-09
- Inventor: Steven M. Shank , John J. Ellis-Monaghan , Marwan H. Khater , Jason S. Orcutt
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Michael Le Strange
- Main IPC: H01L31/105
- IPC: H01L31/105 ; H01L31/0232 ; H01L31/109 ; H01L31/028 ; H01L31/0352 ; H01L31/18

Abstract:
Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe.
Public/Granted literature
- US20170054049A1 Germanium Photodetector with SOI Doping Source Public/Granted day:2017-02-23
Information query
IPC分类: