Invention Grant
- Patent Title: Plasma processing method and plasma processing apparatus
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Application No.: US14521737Application Date: 2014-10-23
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Publication No.: US09653317B2Publication Date: 2017-05-16
- Inventor: Masaru Nishino , Takao Funakubo , Shinichi Kozuka , Ryosuke Niitsuma , Tsutomu Ito
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2013-221468 20131024; JP2014-164369 20140812
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3065 ; H01J37/32 ; C23C16/44
Abstract:
A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.
Public/Granted literature
- US20150118859A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2015-04-30
Information query
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