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    Plasma processing method and plasma processing apparatus
    1.
    发明授权
    Plasma processing method and plasma processing apparatus 有权

    公开(公告)号：US10770268B2

    公开(公告)日：2020-09-08

    申请号：US15865841

    申请日：2018-01-09

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shinya Morikita ,  Takanori Banse ,  Takahisa Iwasaki ,  Ryosuke Niitsuma ,  Hiroki Taoka

    IPC: H01J37/32 ,  C23C16/44 ,  B08B7/00 ,  C23C16/455 ,  C23C16/26 ,  C23C16/505 ,  C23C16/40 ,  H01L21/67

    Abstract: In a plasma processing method, a carbon-containing film is formed on surfaces of components in a chamber by using a plasma of a carbon-containing gas, and a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film is formed on a surface of the carbon-containing film by a silicon-containing gas. Then, a target object is loaded into the chamber and processed by a plasma of a processing gas after the formation of the silicon-containing film. The silicon-containing film is removed from the surface of the carbon-containing film by using a plasma of a fluorine-containing gas after the target object processed by the plasma is unloaded from the chamber, and the carbon-containing film is removed from the surfaces of the components by using a plasma of an oxygen-containing gas.

    Plasma processing method
    3.
    发明授权
    Plasma processing method 有权

    公开(公告)号：US10192750B2

    公开(公告)日：2019-01-29

    申请号：US15605531

    申请日：2017-05-25

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shinya Morikita ,  Ryosuke Niitsuma ,  Weichien Chen

    IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/67 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/683

    Abstract: Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a processing container. The plasma processing method includes: etching the antireflective film using plasma generated in the processing container and the first mask to form a second mask from the antireflective film; etching the organic film using plasma generated in the processing container and the second mask to form a third mask from the organic film; generating plasma of a mixed gas including the first gas and the second gas in the processing container; and etching the etching target layer using plasma generated in the processing container and the third mask.

    Method of processing target object
    6.
    发明授权
    Method of processing target object 有权

    公开(公告)号：US10707088B2

    公开(公告)日：2020-07-07

    申请号：US15673621

    申请日：2017-08-10

    Applicant: Tokyo Electron Limited

    Inventor： Shinya Morikita ,  Takanori Banse ,  Yuta Seya ,  Ryosuke Niitsuma

    IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/027 ,  H01L21/033 ,  H01L21/67

    Abstract: A method of processing a target object is provided. The target object has an etching target layer, an organic film on the etching target layer and a mask on the organic film. The organic film includes a first layer and a second layer, the mask is provided on the first layer, the first layer is provided on the second layer, and the second layer is provided on the etching target layer. The method includes generating plasma of a first gas within a processing vessel of a plasma processing apparatus in which the target object is accommodated; etching the first layer with the plasma of the first gas and the mask until the second layer is exposed; and conformally forming a protection film on a side surface of the first layer; and generating plasma of a second gas and removing the mask with the plasma of the second gas.

    Method for processing workpiece
    7.
    发明授权
    Method for processing workpiece 有权

    公开(公告)号：US10692726B2

    公开(公告)日：2020-06-23

    申请号：US16315812

    申请日：2017-07-04

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shinya Morikita ,  Takanori Banse ,  Yuta Seya ,  Ryosuke Niitsuma

    IPC: H01L21/3065 ,  H05H1/46 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

    Abstract: A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.

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