公开(公告)号：US09779962B2

公开(公告)日：2017-10-03

申请号：US14956719

申请日：2015-12-02

Applicant: Tokyo Electron Limited

Inventor： Takao Funakubo ,  Shinichi Kozuka ,  Yuta Seya ,  Aritoshi Mitani

IPC: H01L21/3065 ,  H01L21/326 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31122 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/31116

Abstract: A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.

公开(公告)号：USD877079S1

公开(公告)日：2020-03-03

申请号：US29554794

申请日：2016-02-16

Applicant: TOKYO ELECTRON LIMITED

Designer： Shinichi Kozuka ,  Ryosuke Niitsuma ,  Manabu Ishikawa

公开(公告)号：US10204763B2

公开(公告)日：2019-02-12

申请号：US14751655

申请日：2015-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takao Funakubo ,  Hirofumi Haga ,  Shinichi Kozuka ,  Wataru Ozawa ,  Akihiro Sakamoto ,  Naoki Taniguchi ,  Hiroshi Tsujimoto ,  Kumiko Ono

IPC: H01J37/32

Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

公开(公告)号：US09653317B2

公开(公告)日：2017-05-16

申请号：US14521737

申请日：2014-10-23

Applicant: Tokyo Electron Limited

Inventor： Masaru Nishino ,  Takao Funakubo ,  Shinichi Kozuka ,  Ryosuke Niitsuma ,  Tsutomu Ito

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32642 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/3065 ,  H01L21/31116

Abstract: A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a CxFy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.

公开(公告)号：US10861675B2

公开(公告)日：2020-12-08

申请号：US16239756

申请日：2019-01-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takao Funakubo ,  Hirofumi Haga ,  Shinichi Kozuka ,  Wataru Ozawa ,  Akihiro Sakamoto ,  Naoki Taniguchi ,  Hiroshi Tsujimoto ,  Kumiko Ono

IPC: H01J37/32

Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

公开(公告)号：USD793572S1

公开(公告)日：2017-08-01

申请号：US29547064

申请日：2015-12-01

Applicant: TOKYO ELECTRON LIMITED

Designer： Shinichi Kozuka ,  Ryosuke Niitsuma ,  Manabu Ishikawa