- 专利标题: Semiconductor laser structure
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申请号: US14864810申请日: 2015-09-24
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公开(公告)号: US09653382B2公开(公告)日: 2017-05-16
- 发明人: Jui-Ying Lin , Yen-Hsiang Fang , Chia-Hsin Chao , Yao-Jun Tsai , Yi-Chen Lin
- 申请人: Industrial Technology Research Institute
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 主分类号: H01S5/024
- IPC分类号: H01S5/024 ; H01S5/026 ; H01S5/34 ; H01L23/48 ; H01L21/306 ; H01L27/02 ; H01L33/20 ; H01L33/62 ; H01L21/768 ; H01L23/00 ; H01S5/02 ; G02B6/12 ; G02B6/34 ; H01L29/861 ; H01L23/60 ; H01L23/13 ; H01L23/14 ; H01L23/498 ; H01L21/48 ; H01L25/16
摘要:
A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.
公开/授权文献
- US20160020578A1 SEMICONDUCTOR LASER STRUCTURE 公开/授权日:2016-01-21