公开(公告)号：US20190019702A1

公开(公告)日：2019-01-17

申请号：US15847950

申请日：2017-12-20

申请人： Industrial Technology Research Institute

发明人： Ming-Hsien Wu ,  Yih-Der Guo ,  Yen-Hsiang Fang ,  Yao-Jun Tsai ,  Yi-Chen Lin

IPC分类号： H01L21/673 ,  H01L21/683

CPC分类号： H01L21/67333 ,  H01L21/67144 ,  H01L21/6838 ,  H01L24/95 ,  H01L33/00 ,  H01L33/0095 ,  H01L33/20

摘要： A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.

公开(公告)号：US10134709B1

公开(公告)日：2018-11-20

申请号：US15849692

申请日：2017-12-21

申请人： Industrial Technology Research Institute

发明人： Ming-Hsien Wu ,  Yao-Jun Tsai ,  Chia-Hsin Chao ,  Yen-Hsiang Fang ,  Yi-Chen Lin ,  Ching-Ya Yeh

IPC分类号： H01L25/16 ,  H01L25/065 ,  H01L33/62 ,  H01L33/58 ,  H01L33/50 ,  H01L33/00 ,  H01L33/54

摘要： A light emitting diode package including a circuit layer, a light-shielding layer, a plurality of light emitting diodes and an encapsulation layer is provided. A thickness of the circuit layer is less than 100 μm. The light-shielding layer is disposed on a first surface of the circuit layer and the light-shielding layer has a plurality of apertures. The light emitting diodes are disposed on the first surface of the circuit layer and in the apertures of the light-shielding layer. The light emitting diodes are electrically connected to the circuit layer. The encapsulation layer covers the light-shielding layer. A refractive index of the encapsulation layer is 1.4 and to 1.7. The Young's modulus of the encapsulation layer is larger than or equal to 1 GPa. A thickness of the encapsulation layer is greater than thicknesses of the light emitting diodes.

公开(公告)号：US09653382B2

公开(公告)日：2017-05-16

申请号：US14864810

申请日：2015-09-24

申请人： Industrial Technology Research Institute

发明人： Jui-Ying Lin ,  Yen-Hsiang Fang ,  Chia-Hsin Chao ,  Yao-Jun Tsai ,  Yi-Chen Lin

IPC分类号： H01S5/024 ,  H01S5/026 ,  H01S5/34 ,  H01L23/48 ,  H01L21/306 ,  H01L27/02 ,  H01L33/20 ,  H01L33/62 ,  H01L21/768 ,  H01L23/00 ,  H01S5/02 ,  G02B6/12 ,  G02B6/34 ,  H01L29/861 ,  H01L23/60 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L21/48 ,  H01L25/16

CPC分类号： H01L23/481 ,  G02B6/12 ,  G02B6/34 ,  G02B2006/12061 ,  H01L21/30604 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/60 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/80 ,  H01L25/167 ,  H01L27/0255 ,  H01L29/861 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/08148 ,  H01L2224/08238 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/29294 ,  H01L2224/32148 ,  H01L2224/32238 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48148 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/80801 ,  H01L2224/80805 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83805 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2933/0066 ,  H01S5/0208 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/34 ,  H01L2924/00 ,  H01L2224/80 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

公开(公告)号：US20170034922A1

公开(公告)日：2017-02-02

申请号：US15222976

申请日：2016-07-29

申请人： Industrial Technology Research Institute

发明人： Ming-Hsien Wu ,  Yen-Hsiang Fang ,  Shih-Hao Wang ,  Yi-Chen Lin

IPC分类号： H05K3/30

CPC分类号： G02B6/34 ,  G01J1/0209 ,  G01J1/0407 ,  G01J1/0422 ,  G02B6/12004 ,  G02B6/305 ,  G02B6/4206 ,  G02B6/4214 ,  G02B6/4298 ,  G02B2006/12121 ,  G02B2006/12147 ,  H01S5/0425 ,  H01S5/12 ,  H04B10/079 ,  H05K3/30 ,  H05K2203/0147 ,  H05K2203/163

摘要： A detection method for electronic devices including steps as follows is provided. The detection method includes: providing an electronic device substrate; attaching a portion of electronic devices of the electronic device substrate through an electronic device transfer module, wherein the electronic device transfer module includes a plurality of detecting elements corresponding to the portion of the electronic devices, and each of the detecting elements includes at least one pair of electrodes; detecting whether a conducting path between the at least one pair of electrodes is generated or not to confirm a status of contact between the portion of the electronic devices and a contact target; and transferring the portion of the electronic devices attached to the electronic device transfer module to a target substrate. An electronic device transfer module having detecting elements is also provided.

摘要翻译： 提供了包括以下步骤的电子设备的检测方法。 检测方法包括：提供电子器件基板; 通过电子设备传送模块附接电子设备基板的电子设备的一部分，其中电子设备传送模块包括与电子设备的该部分对应的多个检测元件，并且每个检测元件包括至少一对 的电极; 检测所述至少一对电极之间的传导路径是否产生，以确认所述电子设备的所述部分与所述接触目标之间的接触状态; 以及将附接到电子设备传送模块的电子设备的部分传送到目标基板。 还提供了一种具有检测元件的电子设备传送模块。

公开(公告)号：US11227787B2

公开(公告)日：2022-01-18

申请号：US16026080

申请日：2018-07-03

申请人： Industrial Technology Research Institute

发明人： Ming-Hsien Wu ,  Yih-Der Guo ,  Yen-Hsiang Fang ,  Yao-Jun Tsai ,  Yi-Chen Lin

IPC分类号： H01L21/683 ,  H01L21/67

摘要： A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.

公开(公告)号：US20210091265A1

公开(公告)日：2021-03-25

申请号：US17113114

申请日：2020-12-07

申请人： Industrial Technology Research Institute

发明人： Yih-Der Guo ,  Ming-Hsien Wu ,  Yi-Chen Lin ,  Yao-Jun Tsai ,  Yen-Hsiang Fang

IPC分类号： H01L33/22 ,  H01L33/62 ,  H01L33/38 ,  H01L33/32 ,  H01L27/15

摘要： A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.

公开(公告)号：US09171779B2

公开(公告)日：2015-10-27

申请号：US14472400

申请日：2014-08-29

申请人： Industrial Technology Research Institute

发明人： Jui-Ying Lin ,  Yen-Hsiang Fang ,  Chia-Hsin Chao ,  Yao-Jun Tsai ,  Yi-Chen Lin

IPC分类号： H01S5/024 ,  H01L23/48 ,  H01L21/306 ,  H01L27/02 ,  H01L33/20 ,  H01L33/62 ,  H01L21/768 ,  H01L23/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/34 ,  G02B6/12 ,  G02B6/34 ,  H01L29/861

CPC分类号： H01L23/481 ,  G02B6/12 ,  G02B6/34 ,  G02B2006/12061 ,  H01L21/30604 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/60 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/80 ,  H01L25/167 ,  H01L27/0255 ,  H01L29/861 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/08148 ,  H01L2224/08238 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/29294 ,  H01L2224/32148 ,  H01L2224/32238 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48148 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/80801 ,  H01L2224/80805 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83805 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2933/0066 ,  H01S5/0208 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/34 ,  H01L2924/00 ,  H01L2224/80 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

摘要翻译： 提供半导体激光器结构。 半导体激光器包括中心热分流器，环形硅波导，连续热分流器，粘合剂层和激光元件。 中心热分流器位于具有围绕中心热分流的掩埋氧化物层的SOI衬底上。 环形硅波导位于掩埋氧化层上并围绕中心热分流。 环形硅波导包括p型材料部分的P-N结，n型材料部分和其间的耗尽区域。 连续的热分流器覆盖一部分掩埋的氧化物层并且环绕着环形硅波导。 粘合剂层覆盖环形硅波导和掩埋氧化物层。 激光元件覆盖中心热分流器，粘合剂层和相邻热分流器。

公开(公告)号：US20150063386A1

公开(公告)日：2015-03-05

申请号：US14472400

申请日：2014-08-29

申请人： Industrial Technology Research Institute

发明人： Jui-Ying Lin ,  Yen-Hsiang Fang ,  Chia-Hsin Chao ,  Yao-Jun Tsai ,  Yi-Chen Lin

IPC分类号： H01S5/024 ,  H01S5/02 ,  H01S5/34 ,  H01S5/026

CPC分类号： H01L23/481 ,  G02B6/12 ,  G02B6/34 ,  G02B2006/12061 ,  H01L21/30604 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/60 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/80 ,  H01L25/167 ,  H01L27/0255 ,  H01L29/861 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/08148 ,  H01L2224/08238 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/29294 ,  H01L2224/32148 ,  H01L2224/32238 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48148 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/80801 ,  H01L2224/80805 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83805 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2933/0066 ,  H01S5/0208 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/34 ,  H01L2924/00 ,  H01L2224/80 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

摘要翻译： 提供半导体激光器结构。 半导体激光器包括中心热分流器，环形硅波导，连续热分流器，粘合剂层和激光元件。 中心热分流器位于具有围绕中心热分流的掩埋氧化物层的SOI衬底上。 环形硅波导位于掩埋氧化层上并围绕中心热分流。 环形硅波导包括p型材料部分的P-N结，n型材料部分和其间的耗尽区域。 连续的热分流器覆盖一部分掩埋的氧化物层并且环绕着环形硅波导。 粘合剂层覆盖环形硅波导和掩埋氧化物层。 激光元件覆盖中心热分流器，粘合剂层和相邻热分流器。

公开(公告)号：US11163121B2

公开(公告)日：2021-11-02

申请号：US16430447

申请日：2019-06-04

申请人： Industrial Technology Research Institute

发明人： Ming-Hsien Wu ,  Yen-Hsiang Fang ,  Shih-Hao Wang ,  Yi-Chen Lin

IPC分类号： H05K3/30 ,  G02B6/34 ,  G02B6/42 ,  G01J1/04 ,  G01J1/02 ,  G02B6/12 ,  G02B6/30 ,  H01S5/12 ,  H04B10/079

摘要： A detection method for electronic devices including steps as follows is provided. The detection method includes: providing an electronic device substrate; attaching a portion of electronic devices of the electronic device substrate through an electronic device transfer module, wherein the electronic device transfer module includes a plurality of detecting elements corresponding to the portion of the electronic devices, and each of the detecting elements includes at least one pair of electrodes; detecting whether a conducting path between the at least one pair of electrodes is generated or not to confirm a status of contact between the portion of the electronic devices and a contact target; and transferring the portion of the electronic devices attached to the electronic device transfer module to a target substrate. An electronic device transfer module having detecting elements is also provided.

公开(公告)号：US20210057611A1

公开(公告)日：2021-02-25

申请号：US16726271

申请日：2019-12-24

申请人： Industrial Technology Research Institute

发明人： Yih-Der Guo ,  Ming-Hsien Wu ,  Yi-Chen Lin ,  Yao-Jun Tsai ,  Yen-Hsiang Fang

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L25/075

摘要： A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.