Invention Grant
- Patent Title: Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device
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Application No.: US14933901Application Date: 2015-11-05
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Publication No.: US09653478B2Publication Date: 2017-05-16
- Inventor: Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
- Applicant: Hitachi, Ltd.
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2010-174172 20100803
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/8249 ; H01L21/84 ; H01L27/06 ; H01L27/07 ; H01L27/092 ; H01L27/11 ; H01L27/11521 ; H01L27/11568 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; G11C16/04 ; H01L23/535 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/73 ; H01L27/102 ; G11C11/412
Abstract:
Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.
Public/Granted literature
- US20160071882A1 Semiconductor Device, Method for Manufacturing Same, and Nonvolatile Semiconductor Memory Device Public/Granted day:2016-03-10
Information query
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