Semiconductor device and method of manufacturing the same

    公开(公告)号:US10453949B2

    公开(公告)日:2019-10-22

    申请号:US15625178

    申请日:2017-06-16

    Applicant: HITACHI, LTD.

    Abstract: A semiconductor device has an active region in which a plurality of unit cells are regularly arranged, each of the unit cells including: a channel region having a first conductivity type and formed over a front surface of a semiconductor substrate; a source region having a second conductivity type different from the first conductivity type and formed over the front surface of the semiconductor substrate in such a manner as to be in contact with the channel region; and a JFET region having the second conductivity type and is formed over the front surface of the semiconductor substrate on the opposite side of the channel region from the source region in such a manner as to be in contact with the channel region. The channel region is comprised of a first channel region and a second channel region higher than the first channel region in impurity concentration, over the front surface of the semiconductor substrate.

    Semiconductor device and method for manufacturing same
    7.
    发明授权
    Semiconductor device and method for manufacturing same 有权
    半导体装置及其制造方法

    公开(公告)号:US09490247B2

    公开(公告)日:2016-11-08

    申请号:US14914883

    申请日:2013-08-29

    Applicant: HITACHI, LTD.

    Abstract: An IGBT (50) includes a p+ collector region (3) and an n−− drift region (1), in which a first transistor (TR1) and a second transistor (TR2) are formed on the n−− drift region (1). In the n−− drift region (1), a p-type hole extraction region (14) is formed in contact with the second transistor (TR2). When the IGBT (50) is in an on-state, electrons and holes flow through the first transistor (TR1), but a current does not flow through the second transistor (TR2). On the other hand, when the IGBT (50) is switched from the on-state to an off-state, holes flow through the first transistor (TR1), and holes flow through the hole extraction region (14) and the second transistor (TR2).

    Abstract translation: IGBT(50)包括p +集电极区(3)和n漂移区(1),其中在漂移区(1)上形成第一晶体管(TR1)和第二晶体管(TR2) )。 在n漂移区域(1)中,形成与第二晶体管(TR2)接触的p型空穴提取区域(14)。 当IGBT(50)处于导通状态时,电子和空穴流过第一晶体管(TR1),但电流不流过第二晶体管(TR2)。 另一方面,当IGBT(50)从导通状态切换到断开状态时,空穴流过第一晶体管(TR1),空穴流过空穴取出区域(14)和第二晶体管( TR2)。

    Work content detection determination device, work content detection determination system, and wearable sensor embedded glove

    公开(公告)号:US12266252B2

    公开(公告)日:2025-04-01

    申请号:US18520323

    申请日:2023-11-27

    Applicant: Hitachi, Ltd.

    Abstract: A work detection determination system performs detection determination on a work with high accuracy.
    The work detection determination system includes a glove that is worn on a hand of a worker and includes a microphone detecting a work sound of a hand operation in which the hand works on a work target through a contact of the hand with the work target, a pressure sensor detecting a pressure of a work of the hand operation, a motion sensor detecting a motion of the hand operation, and a transmitting unit transmitting a sound signal of the microphone, a pressure signal of the pressure sensor, and a motion signal of the motion sensor; a receiving unit that receives the sound signal, the pressure signal, and the motion signal transmitted from the transmitting unit; a work determination unit that performs detection determination of a work content of the worker by using the sound signal, the pressure signal, and the motion signal; and a notification unit that notifies a determination result of the work determination unit.

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