Invention Grant
- Patent Title: Semiconductive device with a single diffusion break and method of fabricating the same
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Application No.: US14830756Application Date: 2015-08-20
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Publication No.: US09660022B2Publication Date: 2017-05-23
- Inventor: En-Chiuan Liou , Chih-Wei Yang , Yu-Cheng Tung , Chia-Hsun Tseng
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu, Taiwan
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu, Taiwan
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/06 ; H01L29/66 ; H01L21/8234 ; H01L21/311 ; H01L21/762

Abstract:
A method of fabricating a single diffusion break includes providing a fin with two gate structures crossing the fin and a middle dummy gate structure crossing the fin, wherein the middle dummy gate structure is sandwiched by the gate structures. Later, numerous spacers are formed and each spacer respectively surrounds the gate structures and the middle dummy gate structure. Then, the middle dummy gate structure, and part of the fin directly under the middle dummy gate structure are removed to form a recess. Finally, an isolating layer in the recess is formed to close an entrance of the recess so as to form a void embedded within the recess.
Public/Granted literature
- US20170053980A1 SEMICONDUCTIVE DEVICE WITH A SINGLE DIFFUSION BREAK AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-02-23
Information query
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