- 专利标题: Field emission electron source and field emission device
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申请号: US13718587申请日: 2012-12-18
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公开(公告)号: US09666400B2公开(公告)日: 2017-05-30
- 发明人: Cai-Lin Guo , Jie Tang , Peng Liu , Shou-Shan Fan
- 申请人: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- 申请人地址: CN Beijing TW New Taipei
- 专利权人: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- 当前专利权人: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- 当前专利权人地址: CN Beijing TW New Taipei
- 代理商 Steven Reiss
- 优先权: CN2012103808707 20121010
- 主分类号: H01J1/304
- IPC分类号: H01J1/304 ; H01J3/02 ; B82Y99/00 ; B82Y30/00
摘要:
A field emission electron source includes a linear carbon nanotube structure, an insulating layer and at least one conductive ring. The linear carbon nanotube structure has a first end and a second end. The insulating layer is located on outer surface of the linear carbon nanotube structure. The first conductive ring includes a first ring face 1301 and a second ring face, an end surface of the linear carbon nanotube structure, and the first ring face are coplanar.
公开/授权文献
- US20140097741A1 FIELD EMISSION ELECTRON SOURCE AND FIELD EMISSION DEVICE 公开/授权日:2014-04-10
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