Carbon nanotube structure
    3.
    发明授权

    公开(公告)号:US11312102B2

    公开(公告)日:2022-04-26

    申请号:US16436006

    申请日:2019-06-10

    摘要: The present disclosure relates to a carbon nanotube structure. The carbon nanotube structure includes a carbon nanotube array, a carbon nanotube layer located on the carbon nanotube array, and a carbon nanotube cluster between the carbon nanotube array and the carbon nanotube layer. The carbon nanotube array includes a number of first carbon nanotubes that are parallel with each other. The carbon nanotube layer includes a number of second carbon nanotubes. The carbon nanotube cluster includes a plurality of third carbon nanotubes that are entangled around both the plurality of first carbon nanotubes and the plurality of second carbon nanotubes. The carbon nanotube array is fixed on the carbon nanotube layer by the plurality of third carbon nanotubes so that the entire carbon nanotube structure is free-standing.

    Thermionic emission device and method for making the same

    公开(公告)号:US11195686B2

    公开(公告)日:2021-12-07

    申请号:US17067734

    申请日:2020-10-11

    摘要: A thermionic emission device comprises a first electrode, a second electrode, a single carbon nanotube, an insulating layer and a gate electrode. The gate electrode is located on a first surface of the insulating layer. The first electrode and the second electrode are located on a second surface of the insulating layer and spaced apart from each other. The carbon nanotube comprises a first end, a second end opposite to the first end, and a middle portion located between the first end and the second end. The first end of the carbon nanotube is electrically connected to the first electrode, and the second end of the carbon nanotube is electrically connected to the second electrode.

    Method for making carbon nanotubes

    公开(公告)号:US10676359B2

    公开(公告)日:2020-06-09

    申请号:US15979423

    申请日:2018-05-14

    摘要: A method of making carbon nanotubes with equal or other ratio of semiconductive to conductive elements in integrated form includes: depositing a catalyst layer on a substrate and heating same in a reaction furnace to a predetermined temperature. A carbon source gas and a protective gas are introduced to grow a plurality of carbon nanotube segments, some carbon nanotube segments being conductive metallic. A positive electric field is applied to the plurality of carbon nanotube segments, wherein the catalyst layer is positively charged and the positive electric field is reversed to the negative, to grow a second carbon nanotube segment structure from the metallic carbon nanotube segments. The direction of the negative electric field is along a second direction and the second carbon nanotube segment structure then comprises a plurality of semiconducting carbon nanotube segments.