Invention Grant
- Patent Title: Topological method to build self-aligned MTJ without a mask
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Application No.: US14841997Application Date: 2015-09-01
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Publication No.: US09666791B2Publication Date: 2017-05-30
- Inventor: Xunyuan Zhang , Ruilong Xie , Xiuyu Cai , Seowoo Nam , Hyun-Jin Cho
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L21/02 ; H01L27/22 ; H01L43/12 ; H01L43/02

Abstract:
A method of forming a self-aligned MTJ without using a photolithography mask and the resulting device are provided. Embodiments include forming a first electrode over a metal layer, the metal layer recessed in a low-k dielectric layer; forming a MTJ layer over the first electrode; forming a second electrode over the MTJ layer; removing portions of the second electrode, the MTJ layer, and the first electrode down to the low-k dielectric layer; forming a silicon nitride-based layer over the second electrode and the low-k dielectric layer; and planarizing the silicon nitride-based layer down to the second electrode.
Public/Granted literature
- US20160141489A1 TOPOLOGICAL METHOD TO BUILD SELF-ALIGNED MTJ WITHOUT A MASK Public/Granted day:2016-05-19
Information query
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