Invention Grant
- Patent Title: Nonvolatile memory device and operating method thereof
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Application No.: US14458771Application Date: 2014-08-13
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Publication No.: US09672924B2Publication Date: 2017-06-06
- Inventor: Yongsung Cho , Ohsuk Kwon , Kihwan Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2013-0096565 20130814
- Main IPC: G11C16/08
- IPC: G11C16/08 ; G11C16/10 ; G11C16/24 ; G11C16/26 ; G11C16/34 ; G06F12/02

Abstract:
An operating method of a nonvolatile memory device includes receiving a read command from a memory controller; determining a read mode based on the received read command, controlling a precharge time and an offset of a precharge control signal according to the determination result, and precharging a sensing bit line among bit lines to a precharge voltage based on the controlled precharge control signal. The sensing bit line is a bit line being precharged according to the determined read mode among the bit lines.
Public/Granted literature
- US20150052294A1 NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2015-02-19
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