Nonvolatile memory device having adjustable program pulse width
    3.
    发明授权
    Nonvolatile memory device having adjustable program pulse width 有权
    具有可调程序脉冲宽度的非易失性存储器件

    公开(公告)号:US09064545B2

    公开(公告)日:2015-06-23

    申请号:US13721859

    申请日:2012-12-20

    CPC classification number: G11C7/04 G11C16/0483 G11C16/10

    Abstract: A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line.

    Abstract translation: 非易失性存储器件的编程方法包括:确定非易失性存储器件的温度状态,根据温度条件确定编程脉冲周期,使用编程脉冲周期向选定字线提供编程电压,并提供通过电压 在将程序电压提供给所选择的字线的同时,将其作为未选择的字线。

    NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF
    6.
    发明申请
    NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF 有权
    非易失性存储器件及其操作方法

    公开(公告)号:US20150052294A1

    公开(公告)日:2015-02-19

    申请号:US14458771

    申请日:2014-08-13

    Abstract: An operating method of a nonvolatile memory device includes receiving a read command from a memory controller; determining a read mode based on the received read command, controlling a precharge time and an offset of a precharge control signal according to the determination result, and precharging a sensing bit line among bit lines to a precharge voltage based on the controlled precharge control signal. The sensing bit line is a bit line being precharged according to the determined read mode among the bit lines.

    Abstract translation: 非易失性存储器件的操作方法包括从存储器控制器接收读取命令; 基于接收到的读取命令确定读取模式,根据确定结果控制预充电控制信号的预充电时间和偏移量,以及基于受控的预充电控制信号将位线之间的感测位线预充电为预充电电压。 感测位线是根据位线中确定的读取模式预充电的位线。

    NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
    7.
    发明申请
    NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME 审中-公开
    非易失性存储器件和包括其的存储器系统

    公开(公告)号:US20130223156A1

    公开(公告)日:2013-08-29

    申请号:US13721892

    申请日:2012-12-20

    CPC classification number: G11C16/3459 G11C11/5628 G11C16/10 G11C2211/5621

    Abstract: A program method is provided for a nonvolatile memory device, including a substrate and multiple memory cells formed in a pocket well in the substrate. The program method includes supplying a program voltage to a selected word line during a program execution period of a program loop, supplying a verification voltage to the selected word line during a verification period of the program loop, and supplying a negative voltage to the pocket well as a well bias voltage during the verification period.

    Abstract translation: 提供了一种用于非易失性存储器件的编程方法,包括衬底和形成在衬底中的口袋中的多个存储单元。 程序方法包括在程序循环的程序执行期间向所选字线提供编程电压,在程序循环的验证周期期间向所选择的字线提供验证电压,并向口袋提供负电压 作为验证期间的良好偏置电压。

    METHODS OF OPERATING NONVOLATILE MEMORY DEVICES THAT SUPPORT EFFICIENT ERROR DETECTION
    8.
    发明申请
    METHODS OF OPERATING NONVOLATILE MEMORY DEVICES THAT SUPPORT EFFICIENT ERROR DETECTION 审中-公开
    操作有效的错误检测的非易失性存储器件的操作方法

    公开(公告)号:US20150248930A1

    公开(公告)日:2015-09-03

    申请号:US14712939

    申请日:2015-05-15

    Abstract: Methods of operating nonvolatile memory devices may include identifying one or more multi-bit nonvolatile memory cells in a nonvolatile memory device that have undergone unintentional programming from an erased state to an at least partially programmed state. Errors generated during an operation to program a first plurality of multi-bit nonvolatile memory cells may be detected by performing a plurality of reading operations to generate error detection data and then decoding the error detection data to identify specific cells having errors. A programmed first plurality of multi-bit nonvolatile memory cells and a force-bit data vector, which was modified during the program operation, may be read to support error detection. This data, along with data read from a page buffer associated with the first plurality of multi-bit nonvolatile memory cells, may then be decoded to identify which of the first plurality of multi-bit nonvolatile memory cells are unintentionally programmed cells.

    Abstract translation: 操作非易失性存储器件的方法可以包括识别非易失性存储器件中的一个或多个多位非易失性存储器单元,其经历从擦除状态到至少部分编程状态的无意编程。 可以通过执行多个读取操作来生成错误检测数据,然后解码错误检测数据以识别具有错误的特定单元,来检测在编程第一多个多位非易失性存储器单元的操作期间产生的错误。 可以读取编程的第一多个多位非易失性存储单元和在编程操作期间被修改的强位数据向量,以支持错误检测。 然后可以将该数据连同从与第一多个多位非易失性存储器单元相关联的页面缓冲器读取的数据解码以识别第一多个多位非易失性存储器单元中的哪一个是无意编程的单元。

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