- Patent Title: Manufacturing method of patterned structure of semiconductor device
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Application No.: US14683120Application Date: 2015-04-09
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Publication No.: US09673049B2Publication Date: 2017-06-06
- Inventor: En-Chiuan Liou , Yu-Cheng Tung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW104107459A 20150309
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033 ; H01L21/308

Abstract:
A manufacturing method of a patterned structure of a semiconductor device includes following steps. A plurality of support features are formed on a substrate. A first conformal spacer layer is formed on the support features and a surface of the substrate, a second conformal spacer layer is formed on the first conformal spacer layer, and a covering layer is formed on the second conformal spacer layer. A gap between the support features is filled with the first conformal spacer layer, the second conformal spacer layer, and the covering layer. A first process is performed to remove a part of the covering layer, the second conformal spacer layer, and the first conformal spacer layer. A second process is performed to remove the support features or the first conformal spacer layer between the support feature and the second conformal spacer layer to expose a part of the surface of the substrate.
Public/Granted literature
- US20160268142A1 MANUFACTURING METHOD OF PATTERNED STRUCTURE OF SEMICONDUCTOR DEVICE Public/Granted day:2016-09-15
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