Invention Grant
- Patent Title: Method of forming self aligned continuity blocks for mandrel and non-mandrel interconnect lines
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Application No.: US15077564Application Date: 2016-03-22
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Publication No.: US09679809B1Publication Date: 2017-06-13
- Inventor: Jongwook Kye , Yan Wang , Chenchen Wang , Wenhui Wang , Lei Yuan , Jia Zeng , Guillaume Bouche
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/311 ; H01L21/28 ; H01L45/00
Abstract:
A method of forming a pattern for interconnect lines in an integrated circuit includes providing a structure having a first lithographic stack, a mandrel layer and a pattern layer disposed over a dielectric stack. Patterning the structure to form mandrels in the mandrel layer and disposing a spacer layer over the mandrels. Etching the spacer layer to form spacers disposed on sidewalls of the mandrels. The spacers and mandrels defining beta and gamma regions. A beta region includes a beta block mask portion and a gamma region includes a gamma block mask portion of the pattern layer. The method also includes etching a beta pillar over the beta block mask portion and etching a gamma pillar over the gamma block mask portion. The method also includes etching the structure to form a pattern in the pattern layer, the pattern including the gamma and beta block mask portions.
Information query
IPC分类:
