Invention Grant
- Patent Title: Secondary memory device
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Application No.: US14087095Application Date: 2013-11-22
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Publication No.: US09684345B2Publication Date: 2017-06-20
- Inventor: Jin-young Choi , Joon-young Oh , Hee-youb Kang , Jung-hoon Kim , Won-hwa Lee , Jae-beom Byun , Jong-yun Yun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2012-0134863 20121126
- Main IPC: G11C5/00
- IPC: G11C5/00 ; G06F1/18 ; G11C5/02 ; H05K7/20 ; G06F1/20

Abstract:
A secondary memory device includes: a substrate and a housing configured to accommodate at least a part of the substrate. The substrate has upper and lower opposed surfaces and includes a first region in which a first semiconductor device is mounted on the upper surface and a second region in which a second semiconductor device is mounted on the upper surface. The housing includes a first sub-housing covering the upper surface of the substrate at the first region and the first semiconductor device. The first sub-housing does not extend to cover the upper surface of the substrate at the second region.
Public/Granted literature
- US20140146461A1 Secondary Memory Device Public/Granted day:2014-05-29
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