Invention Grant
- Patent Title: Programming multibit memory cells
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Application No.: US14153934Application Date: 2014-01-13
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Publication No.: US09685233B2Publication Date: 2017-06-20
- Inventor: Chih-Chang Hsieh , Ti-Wen Chen , Yung Chun Li , Kuo-Pin Chang
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Yiding Wu
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56 ; G11C16/34 ; G11C16/04 ; H01L27/11551 ; H01L27/11578

Abstract:
A multiple bits per cell memory is operated by applying a one-pass, multiple-level programming, using a single pulse sequence one time (or in one-pass), such as an incremental pulse program sequence, with program verify steps for multiple target program levels, to program multiple bits per cell in a plurality of memory cells. Using these techniques, the number of program pulses required, and the time required for programming the data can be reduced. As a result, an improvement in programming throughput and a reduction in disturbance conditions are achieved. Variants of the one-pass, multiple-level programming operation can be adopted for a variety of memory cell types, memory architectures, programming speeds, and data storage densities.
Public/Granted literature
- US20140198570A1 PROGRAMMING MULTIBIT MEMORY CELLS Public/Granted day:2014-07-17
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