Invention Grant
- Patent Title: Semiconductor device, method of manufacturing the same, and signal transmitting/receiving method using the semiconductor device
-
Application No.: US14255270Application Date: 2014-04-17
-
Publication No.: US09685496B2Publication Date: 2017-06-20
- Inventor: Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2007-313821 20071204
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L49/02 ; G01R31/28 ; G01R31/302 ; G01R31/303

Abstract:
A semiconductor device includes a semiconductor chip including a main surface, an internal circuit including a plurality of transistors, formed on the main surface, a bonding pad electrically connected to the internal circuit, formed on the main surface, an inductor for communicating an external device in a non-contact manner, formed on the main surface, and a seal ring formed along an outer peripheral edge of the semiconductor chip to surround the internal circuit and the bonding pad in a plan view. The inductor has a configuration to surround the internal circuit and the bonding pad in the plan view and along the seal ring. The inductor is arranged inside the seal ring.
Public/Granted literature
Information query
IPC分类: