- 专利标题: Chemical for forming protective film
-
申请号: US13698244申请日: 2011-05-11
-
公开(公告)号: US09691603B2公开(公告)日: 2017-06-27
- 发明人: Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Atsushi Ryokawa , Shuhei Yamada , Hidehisa Nanai , Yoshinori Akamatsu
- 申请人: Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Atsushi Ryokawa , Shuhei Yamada , Hidehisa Nanai , Yoshinori Akamatsu
- 申请人地址: JP Ube-shi
- 专利权人: Central Glass Company, Limited
- 当前专利权人: Central Glass Company, Limited
- 当前专利权人地址: JP Ube-shi
- 代理机构: Crowell & Moring LLP
- 优先权: JP2010-115396 20100519; JP2010-148222 20100629; JP2011-091952 20110418
- 国际申请: PCT/JP2011/060856 WO 20110511
- 国际公布: WO2011/145500 WO 20111124
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/02 ; H01L21/3105 ; C09D183/08
摘要:
Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4−a−b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4−g−h−w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.
公开/授权文献
- US20130056023A1 Chemical for Forming Protective Film 公开/授权日:2013-03-07
信息查询
IPC分类: