公开(公告)号：US09478407B2

公开(公告)日：2016-10-25

申请号：US12912360

申请日：2010-10-26

申请人： Masanori Saito ,  Shinobu Arata ,  Takashi Saio ,  Soichi Kumon ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Masanori Saito ,  Shinobu Arata ,  Takashi Saio ,  Soichi Kumon ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： B08B3/08 ,  H01L21/02 ,  H01L21/027 ,  C11D1/00 ,  C11D1/04 ,  C11D1/40 ,  C11D11/00 ,  H01L21/306

CPC分类号： H01L21/02068 ,  C11D1/002 ,  C11D1/004 ,  C11D1/04 ,  C11D1/40 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/0212 ,  H01L21/027 ,  H01L21/306 ,  H01L21/31127

摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film on a wafer. The liquid chemical is a liquid chemical containing a water-repellent-protecting-film-forming agent for forming the water-repellent protecting film, at the time of cleaning the wafer which has a finely uneven pattern at its surface and contains at least at a part of a surface of a recessed portion of the uneven pattern at least one kind of matter selected from the group consisting of titanium, titanium nitride, tungsten, aluminum, copper, tin, tantalum nitride, ruthenium and silicon, at least on the surface of the recessed portion. The liquid chemical is characterized in that the water-repellent-protecting-film-forming agent is a water-insoluble surfactant. The water-repellent protecting film formed with the liquid chemical is capable of preventing a pattern collapse of the wafer, in a cleaning step.

摘要翻译： 公开了一种用于在晶片上形成防水保护膜的液体化学品。 液体化学品是含有防水保护膜形成剂的液体化学品，用于形成防水保护膜，在清洁其表面上具有精细不均匀图案的晶片时，至少含有 至少一种选自钛，氮化钛，钨，铝，铜，锡，氮化钽，钌和硅的至少一种物质的不平坦图案的凹陷部分的表面的一部分，至少在 凹部。 液体化学品的特征在于防水保护膜形成剂是水不溶性表面活性剂。 在清洁步骤中，用液体化学品形成的防水保护膜能够防止晶片的图案塌陷。

公开(公告)号：US08957005B2

公开(公告)日：2015-02-17

申请号：US12882898

申请日：2010-09-15

申请人： Soichi Kumon ,  Masanori Saito ,  Takashi Saio ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Soichi Kumon ,  Masanori Saito ,  Takashi Saio ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： C11D3/43 ,  H01L21/306 ,  H01L21/02

CPC分类号： C11D11/0047 ,  C11D7/30 ,  C11D7/3209 ,  C11D11/0064 ,  C11D11/007 ,  H01L21/02052

摘要： A silicon wafer cleaning agent includes at least a water-based cleaning liquid, and a water-repellent cleaning liquid for providing water-repellent to an uneven pattern at least at recessed portions during a cleaning process. The water-repellent cleaning liquid is a liquid composed of a water-repellent compound containing a reactive moiety which is chemically bondable to Si in the silicon wafer, and a hydrophobic group, or is a liquid wherein 0.1 mass % or more of the water-repellent compound relative to the total quantity of 100 mass % of the water-repellent cleaning liquid and an organic solvent are mixed and contained therein. A cleaning process wherein a pattern collapse is easily induced can be improved by using the cleaning agent.

摘要翻译： 硅晶片清洗剂至少包括一种水基清洗液，以及一种用于在清洁过程中至少在凹陷处向不均匀图案提供防水性的防水清洗液。 防水清洗液是由含有与硅晶片中的Si化学结合的反应性部分的疏水性组合物和疏水性基团构成的液体，或其中0.1质量％以上的水溶性化合物， 防水化合物相对于防水性清洗液和有机溶剂的总量的100质量％混合并包含在其中。 可以通过使用清洁剂来改善容易诱发图案塌陷的清洁方法。

公开(公告)号：US20130056023A1

公开(公告)日：2013-03-07

申请号：US13698244

申请日：2011-05-11

申请人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Atsushi Ryokawa ,  Shuhei Yamada ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Atsushi Ryokawa ,  Shuhei Yamada ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： C09K3/18 ,  B08B3/10

CPC分类号： H01L21/02057 ,  C09D183/08 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/3105

摘要： Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4−a−b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4−g−h−w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

摘要翻译： 公开了一种用于在晶片上形成疏水性保护膜的液体化学品，其表面具有精细不均匀的图案，并且至少在不均匀图案的一部分处含有硅元素，所述防水保护膜至少形成在 在清洁晶片时凹凸图案的凹陷部分。 液体化学品包含：由通式R 1a a（H）b（X）4-a-b表示的硅化合物（A）和酸; 或由通式R7gSi（H）h（CH3）w（Z）4-g-h-w表示的硅化合物（C）和含有不超过35质量％的水的碱。 液体化学品中的水的总量相对于液体化学品的总量不超过1000质量ppm。 液体化学品可以改善易于引起图案塌陷的清洁步骤。

公开(公告)号：US20110162680A1

公开(公告)日：2011-07-07

申请号：US12912360

申请日：2010-10-26

申请人： Masanori SAITO ,  Shinobu Arata ,  Takashi Saio ,  Soichi Kumon ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Masanori SAITO ,  Shinobu Arata ,  Takashi Saio ,  Soichi Kumon ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： B08B3/00 ,  C07C211/03 ,  C09D7/12

CPC分类号： H01L21/02068 ,  C11D1/002 ,  C11D1/004 ,  C11D1/04 ,  C11D1/40 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/0212 ,  H01L21/027 ,  H01L21/306 ,  H01L21/31127

摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film on a wafer. The liquid chemical is a liquid chemical containing a water-repellent-protecting-film-forming agent for forming the water-repellent protecting film, at the time of cleaning the wafer which has a finely uneven pattern at its surface and contains at least at a part of a surface of a recessed portion of the uneven pattern at least one kind of matter selected from the group consisting of titanium, titanium nitride, tungsten, aluminum, copper, tin, tantalum nitride, ruthenium and silicon, at least on the surface of the recessed portion. The liquid chemical is characterized in that the water-repellent-protecting-film-forming agent is a water-insoluble surfactant. The water-repellent protecting film formed with the liquid chemical is capable of preventing a pattern collapse of the wafer, in a cleaning step.

摘要翻译： 公开了一种用于在晶片上形成防水保护膜的液体化学品。 液体化学品是含有防水保护膜形成剂的液体化学品，用于形成防水保护膜，在清洁其表面上具有精细不均匀图案的晶片时，至少含有 至少一种选自钛，氮化钛，钨，铝，铜，锡，氮化钽，钌和硅的至少一种物质的不平坦图案的凹陷部分的表面的一部分，至少在 凹部。 液体化学品的特征在于防水保护膜形成剂是水不溶性表面活性剂。 在清洁步骤中，用液体化学品形成的防水保护膜能够防止晶片的图案塌陷。

公开(公告)号：US09090782B2

公开(公告)日：2015-07-28

申请号：US13703593

申请日：2011-06-15

申请人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai

发明人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai

IPC分类号： C09D7/12 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  C07F7/10 ,  C07F7/12

CPC分类号： C09D7/1233 ,  C07F7/10 ,  C07F7/12 ,  C09D7/63 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/306 ,  H01L21/3105

摘要： The present invention relates to a method for cleaning wafers while preventing pattern collapse of the wafers in semiconductor device fabrication, the wafer having at its surface an uneven pattern and containing silicon element at least on surfaces of recessed portions. Provided is: a liquid chemical for forming a protective film which allows efficient cleaning; and a method for cleaning wafers, using the liquid chemical. A liquid chemical for forming a water repellent protective film is provided for forming a protective film on a wafer (having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern), the protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains a dialkylsilyl compound represented by the formula [1] and does not contain an acid and a base. R2(H)SiX  [1]

摘要翻译： 本发明涉及一种在半导体器件制造中防止晶片破裂的同时清洁晶片的方法，晶片在其表面处具有不均匀的图案并至少在凹部的表面上含有硅元件。 提供：用于形成保护膜的液体化学品，其允许有效的清洁; 以及使用液体化学品清洗晶片的方法。 提供一种用于形成防水保护膜的液体化学品，用于在晶片上形成保护膜（在其表面具有不均匀图案并且至少在不均匀图案的一部分处含有硅元素），保护膜至少形成 在清洁晶片时在凹凸图案的凹部的表面上。 液体化学品含有由式[1]表示的二烷基甲硅烷基化合物，不含有酸和碱。 R2（H）SiX [1]

公开(公告)号：US20120174945A1

公开(公告)日：2012-07-12

申请号：US13348268

申请日：2012-01-11

申请人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： B08B3/10 ,  C09D5/00

CPC分类号： H01L21/02068 ,  C11D11/0047

摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].

摘要翻译： 公开了一种用于形成防水保护膜的液体化学品。 液体化学品含有形成防水保护膜的试剂和溶剂。 该试剂用于在晶片的清洁步骤之后并且在用于晶片的干燥步骤之前在晶片上形成防水保护膜，所述晶片在其表面处具有不均匀图案并且包含至少一种钛元素 ，钨，铝，铜，锡，钽和钌在凹凸图案的凹部的表面处，至少在凹部的表面上形成防水保护膜。 液体化学品的特征在于用于形成防水保护膜的试剂是由以下通式[1]表示的化合物。

公开(公告)号：US20090087573A1

公开(公告)日：2009-04-02

申请号：US12093702

申请日：2006-09-21

申请人： Masanori Saito ,  Shigeo Hamaguchi ,  Yoshinori Akamatsu ,  Soichi Kumon

发明人： Masanori Saito ,  Shigeo Hamaguchi ,  Yoshinori Akamatsu ,  Soichi Kumon

IPC分类号： B05D1/02 ,  E04B1/74

CPC分类号： C09D5/32 ,  C03C17/008 ,  C03C17/009 ,  C03C17/30 ,  C03C2217/445 ,  C03C2217/452 ,  C03C2217/475 ,  C03C2217/476 ,  C03C2217/485 ,  C03C2218/113 ,  C08K3/22 ,  C09D1/00 ,  C09D7/20 ,  C09D7/47 ,  C09D7/61 ,  C09D183/04

摘要： There is provided a production process of a heat-ray shielding film-formed base member comprising the steps of mixing a sol solution, formed by using a starting raw material of trialkoxysilane or trialkoxysilane and tetraalkoxysilane, with a solution in which tin-doped indium oxide ultra-fine particles are dispersed, to make a treatment agent; and applying the treatment agent to a base member. In this production process, the treatment agent has an organic solvent having a boiling point of 100-200° C. as a dispersion medium, and the application is conducted by a means by bringing a member retaining the treatment agent into contact with the base member or by a means by spraying the treatment agent, thereby adjusting haze value of the film to be formed to 0.5% or less.

摘要翻译： 提供了一种基于热射线屏蔽膜的基底构件的制造方法，包括以下步骤：将通过使用三烷氧基硅烷或三烷氧基硅烷的起始原料形成的溶胶溶液与四烷氧基硅烷混合，加入锡掺杂的氧化铟 分散超细颗粒，制成处理剂; 以及将处理剂施加到基底构件上。 在该制造方法中，处理剂具有作为分散介质的沸点为100〜200℃的有机溶剂，通过使保持处理剂的部件与基材成为接触的方式进行涂布 或通过喷雾处理剂的方法，从而将待形成的膜的雾度值调节至0.5％以下。

公开(公告)号：US09053924B2

公开(公告)日：2015-06-09

申请号：US12898185

申请日：2010-10-05

申请人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu ,  Shigeo Hamaguchi ,  Kazuhiko Maeda

发明人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu ,  Shigeo Hamaguchi ,  Kazuhiko Maeda

IPC分类号： H01L21/02 ,  B08B3/00 ,  C11D3/16 ,  C11D7/50 ,  H01L21/00 ,  C09D183/04

CPC分类号： H01L21/02052 ,  B08B3/00 ,  C09D183/04 ,  C11D3/162 ,  C11D7/5022 ,  H01L21/00 ,  H01L21/02054

摘要： A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.

摘要翻译： 一种用于硅晶片（第一清洁剂）的清洁剂至少含有一种水基清洗液和一种防水清洗液，用于在清洁过程中至少提供具有防水性的凹凸图案的凹陷部分。 水性清洗液是将具有与硅晶片中的Si元素和疏水性基团化学结合的反应性部分的防水化合物和至少含有醇溶剂的有机溶剂混合并包含的液体。 利用该清洁剂，可以提高倾向于引起图案塌陷的清洁处理。

公开(公告)号：US08932390B2

公开(公告)日：2015-01-13

申请号：US13348268

申请日：2012-01-11

申请人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： C09K3/18 ,  H01L21/02

CPC分类号： H01L21/02068 ,  C11D11/0047

摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].

摘要翻译： 公开了一种用于形成防水保护膜的液体化学品。 液体化学品含有形成防水保护膜的试剂和溶剂。 该试剂用于在晶片的清洁步骤之后并且在用于晶片的干燥步骤之前在晶片上形成防水保护膜，所述晶片在其表面处具有不均匀图案并且包含至少一种钛元素 ，钨，铝，铜，锡，钽和钌在凹凸图案的凹部的表面处，至少在凹部的表面上形成防水保护膜。 液体化学品的特征在于用于形成防水保护膜的试剂是由以下通式[1]表示的化合物。

公开(公告)号：US08828144B2

公开(公告)日：2014-09-09

申请号：US13350007

申请日：2012-01-13

申请人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： H01L21/00 ,  H01L21/02

CPC分类号： H01L21/02057

摘要： A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.

摘要翻译： 一种在其表面上清洁具有不均匀图案的晶片的方法。 该方法至少包括以下步骤：用清洗液清洗晶片; 在清洁后用拒水液体化学品代替保留在晶片的凹陷部分中的清洁液体; 干燥晶片，其中，所述清洗液含有80质量％以上的沸点为55〜200℃的溶剂，其中，所述取代工序中供给的所述憎水性液体化学物质的温度不低于 40℃以下，并且低于防水液体化学品的沸点，从而至少对凹部的表面赋予防水性。