公开(公告)号：US20120211025A1

公开(公告)日：2012-08-23

申请号：US13350007

申请日：2012-01-13

申请人： Soichi KUMON ,  Takashi SAIO ,  Shinobu ARATA ,  Masanori SAITO ,  Hidehisa NANAI ,  Yoshinori AKAMATSU

发明人： Soichi KUMON ,  Takashi SAIO ,  Shinobu ARATA ,  Masanori SAITO ,  Hidehisa NANAI ,  Yoshinori AKAMATSU

IPC分类号： B08B3/08 ,  C11D17/00 ,  C23G1/14 ,  B08B7/04 ,  C23G1/02

CPC分类号： H01L21/02057

摘要： A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.

摘要翻译： 一种在其表面上清洁具有不均匀图案的晶片的方法。 该方法至少包括以下步骤：用清洗液清洗晶片; 在清洁后用拒水液体化学品代替保留在晶片的凹陷部分中的清洁液体; 干燥晶片，其中，所述清洗液含有80质量％以上的沸点为55〜200℃的溶剂，其中，所述取代工序中供给的所述憎水性液体化学物质的温度不低于 40℃以下，并且低于防水液体化学品的沸点，从而至少对凹部的表面赋予防水性。

公开(公告)号：US20100172620A1

公开(公告)日：2010-07-08

申请号：US12602018

申请日：2008-05-29

申请人： Hidehisa Nanai

发明人： Hidehisa Nanai

IPC分类号： G02B6/10 ,  G02B6/04

CPC分类号： G02B6/12002 ,  G02B6/122 ,  G02B6/13

摘要： Disclosed in a multichannel optical waveguide device characterized by comprising: a structure including a cladding and having a light-incident end surface, a light-outgoing end surface, and a plurality of flat reflection surfaces located parallel with each other; and L-shaped cores embedded in the cladding, the L-shaped cores being three-dimensionally arranged parallel with each other in m rows and n columns (where m and n are 2 or more), each L-shaped core having end faces which are exposed respectively to the light-incident end surface and the light-outgoing end surface, m number of the L-shaped cores in each column guiding light from the light-incident end surface to the light-outgoing end surface by changing direction of light on n number of the flat reflection surfaces, wherein an interval between the two adjacent cores on the light-incoming end surface is different from an interval between the two adjacent cores on the light-outgoing end surface, the two adjacent cores on the light-incoming end surface respectively corresponding to the two adjacent cores on the light-outgoing end surface.

摘要翻译： 本发明涉及一种多通道光波导器件，其特征在于包括：具有包层的结构，具有光入射端面，发光端面以及平行的多个平面反射面; 嵌入在包层中的L字形芯，L字形芯彼此平行地排列成m行n列（其中m和n为2以上），每个L形磁芯的端面为 分别暴露于光入射端面和发光端面，每列中的L数个芯的m个数通过改变光的方向将来自光入射端面的光引导到出光端面 在n个平面反射面上，其中光入射端面上的两个相邻的芯之间的间隔与发光端面上的两个相邻的芯之间的间隔不同， 入射端面分别对应于光出射端面上的两个相邻的芯。

公开(公告)号：US5840369A

公开(公告)日：1998-11-24

申请号：US819941

申请日：1997-03-18

申请人： Masamichi Maruta ,  Hidehisa Nanai ,  Yoshihiro Moroi ,  Hiroshi Takahashi ,  Seiji Hasegawa

发明人： Masamichi Maruta ,  Hidehisa Nanai ,  Yoshihiro Moroi ,  Hiroshi Takahashi ,  Seiji Hasegawa

IPC分类号： B41M1/12 ,  B41M7/00 ,  C08G73/10 ,  C08G73/12 ,  C09D11/033 ,  C09D11/10 ,  C09D11/102 ,  H01L23/498 ,  H01L23/532 ,  H05K3/28 ,  B05D1/32

CPC分类号： B41M7/00 ,  B41M1/12 ,  C08G73/1032 ,  C08G73/1039 ,  C08G73/1042 ,  C08G73/106 ,  C08G73/123 ,  H01L23/49894 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K3/285

摘要： A polyimide precursor composition which is produced by (i) providing a polyamide acid solution obtained by reacting an aromatic tetracarboxylic acid component and a diamine component in the presence of an oxygen-containing solvent and (ii) subjecting said polyamide acid solution to heat treatment. The polyimide precursor composition exhibits a desirable apparent viscosity and a desirable thixotropic property and it excels in film forming ability, and because of this, it enables the formation a high quality relief pattern film with no defect and which excels in form retention by way of the screen printing. Further, the polyimide precursor composition is extremely suitable for the formation of a relief pattern by way of screen printing in the production of electronic, electric, optical, or precision devices, wherein the relief pattern is required to have a reduced dielectric constant and a reduced residual stress and to have a sufficient heat resistance, moisture resistance, physical strength, and chemical stability.

摘要翻译： 一种聚酰亚胺前体组合物，其通过（i）在含氧溶剂的存在下提供通过使芳族四羧酸组分和二胺组分反应获得的聚酰胺酸溶液和（ii）使所述聚酰胺酸溶液进行热处理而制备。 聚酰亚胺前体组合物表现出理想的表观粘度和理想的触变性，并且成膜性优异，因此能够形成无缺陷的高品质浮雕图案膜，并且通过 丝网印刷。 此外，聚酰亚胺前体组合物非常适合于在电子，电学，光学或精密器件的制造中通过丝网印刷形成凸版图案，其中需要浮雕图案具有降低的介电常数和减小的 残余应力，并具有足够的耐热性，耐湿性，物理强度和化学稳定性。

公开(公告)号：US09053924B2

公开(公告)日：2015-06-09

申请号：US12898185

申请日：2010-10-05

申请人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu ,  Shigeo Hamaguchi ,  Kazuhiko Maeda

发明人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu ,  Shigeo Hamaguchi ,  Kazuhiko Maeda

IPC分类号： H01L21/02 ,  B08B3/00 ,  C11D3/16 ,  C11D7/50 ,  H01L21/00 ,  C09D183/04

CPC分类号： H01L21/02052 ,  B08B3/00 ,  C09D183/04 ,  C11D3/162 ,  C11D7/5022 ,  H01L21/00 ,  H01L21/02054

摘要： A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.

摘要翻译： 一种用于硅晶片（第一清洁剂）的清洁剂至少含有一种水基清洗液和一种防水清洗液，用于在清洁过程中至少提供具有防水性的凹凸图案的凹陷部分。 水性清洗液是将具有与硅晶片中的Si元素和疏水性基团化学结合的反应性部分的防水化合物和至少含有醇溶剂的有机溶剂混合并包含的液体。 利用该清洁剂，可以提高倾向于引起图案塌陷的清洁处理。

公开(公告)号：US08932390B2

公开(公告)日：2015-01-13

申请号：US13348268

申请日：2012-01-11

申请人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Takashi Saio ,  Soichi Kumon ,  Masanori Saito ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： C09K3/18 ,  H01L21/02

CPC分类号： H01L21/02068 ,  C11D11/0047

摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].

摘要翻译： 公开了一种用于形成防水保护膜的液体化学品。 液体化学品含有形成防水保护膜的试剂和溶剂。 该试剂用于在晶片的清洁步骤之后并且在用于晶片的干燥步骤之前在晶片上形成防水保护膜，所述晶片在其表面处具有不均匀图案并且包含至少一种钛元素 ，钨，铝，铜，锡，钽和钌在凹凸图案的凹部的表面处，至少在凹部的表面上形成防水保护膜。 液体化学品的特征在于用于形成防水保护膜的试剂是由以下通式[1]表示的化合物。

公开(公告)号：US08828144B2

公开(公告)日：2014-09-09

申请号：US13350007

申请日：2012-01-13

申请人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Hidehisa Nanai ,  Yoshinori Akamatsu

发明人： Soichi Kumon ,  Takashi Saio ,  Shinobu Arata ,  Masanori Saito ,  Hidehisa Nanai ,  Yoshinori Akamatsu

IPC分类号： H01L21/00 ,  H01L21/02

CPC分类号： H01L21/02057

摘要： A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.

摘要翻译： 一种在其表面上清洁具有不均匀图案的晶片的方法。 该方法至少包括以下步骤：用清洗液清洗晶片; 在清洁后用拒水液体化学品代替保留在晶片的凹陷部分中的清洁液体; 干燥晶片，其中，所述清洗液含有80质量％以上的沸点为55〜200℃的溶剂，其中，所述取代工序中供给的所述憎水性液体化学物质的温度不低于 40℃以下，并且低于防水液体化学品的沸点，从而至少对凹部的表面赋予防水性。

公开(公告)号：US20130104931A1

公开(公告)日：2013-05-02

申请号：US13807708

申请日：2011-06-15

申请人： Shinobu Arata ,  Masanori Saito ,  Takashi Saio ,  Soichi Kumon ,  Hidehisa Nanai

发明人： Shinobu Arata ,  Masanori Saito ,  Takashi Saio ,  Soichi Kumon ,  Hidehisa Nanai

IPC分类号： C09D5/38

CPC分类号： C09D5/38 ,  H01L21/02068 ,  H01L21/321

摘要： Disclosed is a liquid chemical for forming a water repellent protective film at least on surfaces of recessed portions of a metal-based wafer, the liquid chemical for forming a water repellent protective film being characterized by comprising a surfactant which has an HLB value of 0.001-10 according to Griffin's method and includes a hydrophobic moiety having a C6-C18 hydrocarbon group and water, and characterized in that the concentration of the surfactant in the liquid chemical is not smaller than 0.00001 mass % and not larger than the saturated concentration relative to 100 mass % of the total amount of the liquid chemical. This liquid chemical can improve a cleaning step which tends to induce a metal-based wafer to cause a pattern collapse.

摘要翻译： 公开了一种用于在至少在金属基晶片的凹部的表面上形成防水保护膜的液体化学品，用于形成防水保护膜的液体化学品的特征在于包含HLB值为0.001- 10，根据Griffin的方法，包括具有C6-C18烃基和水的疏水部分，其特征在于，液体化学品中表面活性剂的浓度不小于0.00001质量％且不大于相对于100的饱和浓度 液体化学品总量的质量％。 这种液体化学品可以改善易于引起金属基晶片导致图案塌陷的清洁步骤。

公开(公告)号：US20120164818A1

公开(公告)日：2012-06-28

申请号：US13032308

申请日：2011-02-22

申请人： Soichi KUMON ,  Takashi SAIO ,  Shinobu ARATA ,  Masanori SAITO ,  Hidehisa NANAI ,  Yoshinori AKAMATSU

发明人： Soichi KUMON ,  Takashi SAIO ,  Shinobu ARATA ,  Masanori SAITO ,  Hidehisa NANAI ,  Yoshinori AKAMATSU

IPC分类号： H01L21/322

CPC分类号： H01L21/02057

摘要： Disclosed is a process for cleaning a wafer having an uneven pattern at its surface. The process includes at least: a step of cleaning the wafer; a step of substituting a cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and a step of drying the wafer. The process is characterized in that the cleaning liquid has a boiling point of 55 to 200° C., and characterized in that the water-repellent liquid chemical used for the substitution has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions. With this process, it is possible to provide a cleaning process for improving the cleaning step that tends to induce a pattern collapse.

摘要翻译： 公开了一种在其表面上清洁具有不均匀图案的晶片的方法。 该方法至少包括：清洁晶片的步骤; 在清洁之后用拒水性液体化学品代替保留在晶片的凹陷部分中的清洁液体的步骤; 以及干燥晶片的步骤。 该方法的特征在于清洗液的沸点为55-200℃，其特征在于用于替代的拒水液体化学品的温度不低于40℃，低于 所述防水液体化学品的沸点至少赋予所述凹部的表面防水性。 通过该处理，可以提供改善倾向于引起图案塌陷的清洁步骤的清洁处理。

公开(公告)号：US20110214685A1

公开(公告)日：2011-09-08

申请号：US12898185

申请日：2010-10-05

申请人： Soichi KUMON ,  Takashi Saio ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu ,  Shigeo Hamaguchi ,  Kazuhiko Maeda

发明人： Soichi KUMON ,  Takashi Saio ,  Shinobu Arata ,  Hidehisa Nanai ,  Yoshinori Akamatsu ,  Shigeo Hamaguchi ,  Kazuhiko Maeda

IPC分类号： B08B3/00 ,  C11D3/20

CPC分类号： H01L21/02052 ,  B08B3/00 ,  C09D183/04 ,  C11D3/162 ,  C11D7/5022 ,  H01L21/00 ,  H01L21/02054

摘要： A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.

摘要翻译： 一种用于硅晶片（第一清洁剂）的清洁剂至少含有一种水基清洗液和一种防水清洗液，用于在清洁过程中至少提供具有防水性的凹凸图案的凹陷部分。 水性清洗液是将具有与硅晶片中的Si元素和疏水性基团化学结合的反应性部分的防水化合物和至少含有醇溶剂的有机溶剂混合并包含的液体。 利用该清洁剂，可以提高倾向于引起图案塌陷的清洁处理。

公开(公告)号：US5686525A

公开(公告)日：1997-11-11

申请号：US615991

申请日：1996-03-14

申请人： Masamichi Maruta ,  Hidehisa Nanai ,  Yoshihiro Moroi ,  Hiroshi Takahashi ,  Seiji Hasegawa

发明人： Masamichi Maruta ,  Hidehisa Nanai ,  Yoshihiro Moroi ,  Hiroshi Takahashi ,  Seiji Hasegawa

IPC分类号： B41M1/12 ,  B41M7/00 ,  C08G73/10 ,  C08G73/12 ,  C09D11/033 ,  C09D11/10 ,  C09D11/102 ,  H01L23/498 ,  H01L23/532 ,  H05K3/28 ,  C08L79/08 ,  B05D1/32 ,  C08G69/26

CPC分类号： B41M7/00 ,  B41M1/12 ,  C08G73/1032 ,  C08G73/1039 ,  C08G73/1042 ,  C08G73/106 ,  C08G73/123 ,  H01L23/49894 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K3/285

摘要： A polyimide precursor composition which is produced by (i) providing a polyamide acid solution obtained by reacting an aromatic tetracarboxylic acid component and a diamine component in the presence of an oxygen-containing solvent and (ii) subjecting said polyamide acid solution to heat treatment. The polyimide precursor composition exhibits a desirable apparent viscosity and a desirable thixotropic property and it excels in film forming ability, and because of this, it enables the formation a high quality relief pattern film with no defect and which excels in form retention by way of the screen printing. Further, the polyimide precursor composition is extremely suitable for the formation of a relief pattern by way of the screen printing in production of electronic, electric, optical, or precision devices, wherein the relief pattern is required to have a reduced dielectric constant and a reduced residual stress and to have a sufficient heat resistance, moisture resistance, physical strength, and chemical stability.

摘要翻译： 一种聚酰亚胺前体组合物，其通过（i）在含氧溶剂的存在下提供通过使芳族四羧酸组分和二胺组分反应获得的聚酰胺酸溶液和（ii）使所述聚酰胺酸溶液进行热处理而制备。 聚酰亚胺前体组合物表现出理想的表观粘度和理想的触变性，并且成膜性优异，因此能够形成无缺陷的高品质浮雕图案膜，并且通过 丝网印刷。 此外，聚酰亚胺前体组合物非常适合于在电子，电，光学或精密装置的生产中通过丝网印刷形成凸版图案，其中需要浮雕图案具有降低的介电常数和降低的 残余应力，并具有足够的耐热性，耐湿性，物理强度和化学稳定性。