Invention Grant
- Patent Title: Photovoltaic device including a P-N junction and method of manufacturing
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Application No.: US14171020Application Date: 2014-02-03
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Publication No.: US09698285B2Publication Date: 2017-07-04
- Inventor: Dan Damjanovic , Feng Liao , Rick Powell , Rui Shao , Jigish Trivedi , Zhibo Zhao
- Applicant: First Solar, Inc.
- Applicant Address: US OH Perrysburg
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US OH Perrysburg
- Agency: MacMillan, Sobanski & Todd, LLC
- Main IPC: H01L31/044
- IPC: H01L31/044 ; H01L31/0296 ; H01L31/073 ; H01L31/18

Abstract:
A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.
Public/Granted literature
- US20140216550A1 Photovoltaic Device Including a P-N Junction and Method of Manufacturing Public/Granted day:2014-08-07
Information query
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