公开(公告)号：US20240088319A1

公开(公告)日：2024-03-14

申请号：US18507816

申请日：2023-11-13

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US11817516B2

公开(公告)日：2023-11-14

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20200058818A1

公开(公告)日：2020-02-20

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0224

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20170271533A1

公开(公告)日：2017-09-21

申请号：US15612078

申请日：2017-06-02

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US20190221685A1

公开(公告)日：2019-07-18

申请号：US16363499

申请日：2019-03-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US20160126395A1

公开(公告)日：2016-05-05

申请号：US14531425

申请日：2014-11-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/0224

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract translation: 光电器件包括衬底结构和至少一个含硒层，例如CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSeTe层。 该方法还可以包括控制含Se层的厚度范围。

公开(公告)号：US20150040970A1

公开(公告)日：2015-02-12

申请号：US14452306

申请日：2014-08-05

Applicant: First Solar, Inc.

Inventor： Raffi Garabedian ,  Roger Malik ,  Jeremy Theil ,  Jigish Trivedi ,  Ming Yu

IPC: H01L31/0304 ,  C23C16/22 ,  H01L21/64 ,  H01L31/18

CPC classification number: H01L31/0304 ,  C23C14/243 ,  C23C14/568 ,  C23C16/22 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/64 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/03046 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/184 ,  H01L2221/67 ,  Y02E10/544 ,  Y02P70/521

Abstract: An inline vacuum deposition system contains thermal source pairs configured in adjacent deposition zones. Dopant sources allow the electrical characteristics of the sequentially formed layers to be controlled for a preferred deposition growth profile.

Abstract translation: 在线真空沉积系统包含配置在相邻沉积区中的热源对。 掺杂源允许顺序形成的层的电特性被控制用于优选的沉积生长曲线。

公开(公告)号：US20140261685A1

公开(公告)日：2014-09-18

申请号：US14209094

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Feng Liao ,  Jigish Trivedi ,  Zhibo Zhao ,  Rick C. Powell ,  Long Cheng ,  Markus Gloeckler ,  Benyamin Buller ,  Igor Sankin ,  Jeremy Brewer

IPC: H01L31/0352 ,  H01L31/0203 ,  H01L31/0296

CPC classification number: H01L31/035272 ,  H01L31/0203 ,  H01L31/0296 ,  H01L31/1828 ,  Y02E10/543

Abstract: Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdSxTe1-x (where 0≦x≦1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 μm and about 14 μm and methods for forming the same.

Abstract translation: 实施例包括光伏器件，其包括至少一个吸收层，例如 CdTe和/或CdSxTe1-x（其中0＆nlE; x＆nlE; 1），其平均晶粒尺寸与厚度之比大于2至约50，平均晶粒尺寸在约4μm至约14μm之间， 相同。

公开(公告)号：US20140261667A1

公开(公告)日：2014-09-18

申请号：US14209924

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Benyamin Buller ,  Igor Sankin ,  Long Cheng ,  Jigish Trivedi ,  Jianjun Wang ,  Kieran Tracy ,  Scott Christensen ,  Gang Xiong ,  Markus Gloeckler ,  San Yu

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/046 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoNx material is provided over the ZnTe material. A Mo material may also be included in the back electrode above or below the MoNx layer and a metal layer may be also provided over the MoNx layer.

Abstract translation: 公开了一种用于PV器件的背面电极和形成方法。 在吸收材料上提供ZnTe材料，并且在ZnTe材料上提供MoNx材料。 在MoNx层上方或下方的背电极中也可以包含Mo材料，也可以在MoNx层上设置金属层。

公开(公告)号：US20130327391A1

公开(公告)日：2013-12-12

申请号：US13899153

申请日：2013-05-21

Applicant: FIRST SOLAR, INC

Inventor： Markus Gloeckler ,  Akhlesh Gupta ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0216 ,  H01L21/02

CPC classification number: H01L31/1864 ,  H01L21/02474 ,  H01L21/02521 ,  H01L21/02562 ,  H01L21/02672 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0296 ,  H01L31/073

Abstract: A method for producing apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

Abstract translation: 一种用于制造和光伏器件的方法，其包括具有卤化物热处理表面的半导体层，其增加至少一个半导体层内的晶粒生长并改善半导体层之间的界面。 卤化物热处理包括在与半导体层相邻或部分的表面上施加和加热卤化物的多个涂层。