公开(公告)号：US11769844B2

公开(公告)日：2023-09-26

申请号：US17505291

申请日：2021-10-19

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/50

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US20220013674A1

公开(公告)日：2022-01-13

申请号：US17279254

申请日：2019-09-23

Applicant: First Solar, Inc.

Inventor： Paulina Bourgeois ,  Robert Clark-Phelps ,  Qi Fang ,  Jing Guo ,  Gopal Mor ,  Rui Shao

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/054 ,  H01L31/073

Abstract: According to the embodiments provided herein, a method for sputtering a TCO material onto a substrate includes process conditions that produce a textured topography at the interfaces of various layers. The textured topography can include an average roughness from about 5 to about 40 nm. The process conditions can include providing oxygen in the sputtering environment at a flow rate of from 0 to about 30 sccm; or heating the substrate to at least 200; or increasing the magnetic field strength to above 40 mT. The textured topography creates interfacial transition areas which have hybrid physical properties compared to their constituent materials.

公开(公告)号：US20140216550A1

公开(公告)日：2014-08-07

申请号：US14171020

申请日：2014-02-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

Abstract translation: 光电器件包括衬底结构和p型半导体吸收层，该衬底结构包括CdSSe层。 光电器件可以替代地包括CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSSe层。 该方法包括在CdSSe层上形成p型吸收层。

公开(公告)号：US20140186975A1

公开(公告)日：2014-07-03

申请号：US14133946

申请日：2013-12-19

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  Douglas Dauson ,  David Hwang ,  Scott Mills ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/66 ,  H01L31/0224 ,  G01B11/06

CPC classification number: H01L22/12 ,  G01B11/0625 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/1884 ,  H02S50/00 ,  Y02E10/50

Abstract: A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.

Abstract translation: 提供了一种用于光电装置的多层透明导电氧化物层的光电性质和层的厚度实时的在线计算的方法和系统。 该方法和系统包括在沉积期间对堆叠的每个层进行测量。 然后测量用于实时地计算层的光电特性和厚度。

公开(公告)号：US20130196466A1

公开(公告)日：2013-08-01

申请号：US13754613

申请日：2013-01-30

Applicant: FIRST SOLAR, INC

Inventor： Zhibo Zhao ,  Rui Shao ,  Benyamin Buller ,  Dale Roberts

IPC: H01L31/18

CPC classification number: H01L31/1884 ,  C23C14/02 ,  C23C14/024 ,  C23C14/086 ,  C23C14/568 ,  Y02E10/50

Abstract: A method and apparatus for manufacturing a multi-layered structure includes forming a crystalline layer of a material by depositing an amorphous layer of the material on a heated substrate.

Abstract translation: 用于制造多层结构的方法和装置包括通过在加热的衬底上沉积材料的非晶层来形成材料的结晶层。

公开(公告)号：US09508874B2

公开(公告)日：2016-11-29

申请号：US13790645

申请日：2013-03-08

Applicant: FIRST SOLAR, INC.

Inventor： Benyamin Buller ,  Chungho Lee ,  Rui Shao ,  Gang Xiong ,  Zhibo Zhao

IPC: H01L31/00 ,  H01L31/0216 ,  H01L31/0445 ,  H01L31/073 ,  H01L31/0749 ,  H01L31/0224

CPC classification number: H01L31/02167 ,  H01L31/022466 ,  H01L31/0445 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543

Abstract: A photovoltaic module including a dielectric tunneling layer and methods of forming a photovoltaic module with a dielectric tunneling layer.

Abstract translation: 包括电介质隧道层的光伏模块和形成具有介电隧道层的光伏模块的方法。

公开(公告)号：US20150380600A1

公开(公告)日：2015-12-31

申请号：US14844689

申请日：2015-09-03

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  Rui Shao

IPC: H01L31/18 ,  H01L31/073

CPC classification number: H01L31/1884 ,  H01L31/02966 ,  H01L31/0324 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of doping solar cell front contact can improve the efficiency of CdTe-based or other kinds of solar cells.

Abstract translation: 掺杂太阳能电池前端接触的方法可以提高CdTe或其他类型的太阳能电池的效率。

公开(公告)号：US20130230945A1

公开(公告)日：2013-09-05

申请号：US13785495

申请日：2013-03-05

Applicant: FIRST SOLAR, INC

Inventor： Rui Shao ,  Zhibo Zhao ,  Markus Gloeckler ,  David Hwang ,  Benyamin Buller

IPC: H01L31/18

CPC classification number: H01L21/67109 ,  C23C14/086 ,  C23C14/5806 ,  H01L21/677 ,  H01L31/022466 ,  H01L31/0324 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

Abstract translation: 一种用于通过在氢气存在下加热非晶层来形成光伏器件的结晶镉锡酸盐层的方法和装置。

公开(公告)号：US20190221685A1

公开(公告)日：2019-07-18

申请号：US16363499

申请日：2019-03-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US10056507B2

公开(公告)日：2018-08-21

申请号：US14740501

申请日：2015-06-16

Applicant: First Solar, Inc.

Inventor： Rui Shao ,  Markus Gloeckler

IPC: H01L31/18 ,  H01L31/073 ,  H01L31/0224

CPC classification number: H01L31/022466 ,  H01L31/022483 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1-xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1-xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1-xMgxO window layer.