Invention Grant
- Patent Title: Method for writing into and reading a multi-levels EEPROM and corresponding memory device
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Application No.: US14511661Application Date: 2014-10-10
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Publication No.: US09711230B2Publication Date: 2017-07-18
- Inventor: François Tailliet
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1360418 20131025
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/26 ; G11C16/10 ; G11C11/56 ; G11C16/34
Abstract:
During a phase of programming the cell, a first voltage is applied to the source region and a second voltage, higher than the first voltage, is applied to the drain region until the cell is put into conduction. The numerical value of the item of data to be written is controlled by the level of the control voltage applied to the control gate and the item of data is de facto written with the numerical value during the putting into conduction of the cell. The programming is then stopped.
Public/Granted literature
- US20150117116A1 Method for Writing into and Reading a Multi-Levels EEPROM and Corresponding Memory Device Public/Granted day:2015-04-30
Information query
