- 专利标题： Method for writing into and reading a multi-levels EEPROM and corresponding memory device
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申请号： US14511661申请日： 2014-10-10
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公开(公告)号： US09711230B2公开(公告)日： 2017-07-18
- 发明人: François Tailliet
- 申请人： STMicroelectronics (Rousset) SAS
- 申请人地址： FR Rousset
- 专利权人： STMicroelectronics (Rousset) SAS
- 当前专利权人： STMicroelectronics (Rousset) SAS
- 当前专利权人地址： FR Rousset
- 代理机构： Slater Matsil, LLP
- 优先权： FR1360418 20131025
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/26 ; G11C16/10 ; G11C11/56 ; G11C16/34
摘要：
During a phase of programming the cell, a first voltage is applied to the source region and a second voltage, higher than the first voltage, is applied to the drain region until the cell is put into conduction. The numerical value of the item of data to be written is controlled by the level of the control voltage applied to the control gate and the item of data is de facto written with the numerical value during the putting into conduction of the cell. The programming is then stopped.
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