发明授权
- 专利标题: Radio frequency low noise amplifier with on-chip matching and built-in tunable filter
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申请号: US14711623申请日: 2015-05-13
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公开(公告)号: US09712195B2公开(公告)日: 2017-07-18
- 发明人: Cheng-Han Wang , Conor Donovan , Jesse Aaron Richmond , Jin-Su Ko
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理机构: Paradice and Li LLP/Qualcomm
- 主分类号: H04B1/40
- IPC分类号: H04B1/40 ; H04B1/10 ; H03F3/19 ; H03F3/21 ; H04B1/3827 ; H04B1/48 ; H03F1/56 ; H03F1/22 ; H03F1/34 ; H03F3/193 ; H03F3/24
摘要:
An amplifier includes a gain transistor including a control terminal to receive an input signal. A degeneration inductor is coupled between the first terminal of the gain transistor and ground. A shunt inductor and a capacitor are coupled in series between the control terminal of the gain transistor and ground, and form a filter to attenuate frequencies of the input signal within a frequency range. The degeneration inductor and the shunt inductor form a transformer to provide impedance matching.
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