Invention Grant
- Patent Title: High-k / metal gate CMOS transistors with TiN gates
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Application No.: US14724185Application Date: 2015-05-28
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Publication No.: US09721847B2Publication Date: 2017-08-01
- Inventor: Hiroaki Niimi , Brian K. Kirkpatrick
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L21/8238 ; H01L21/28 ; H01L21/324 ; H01L21/3213 ; H01L21/477 ; H01L29/66 ; H01L29/49 ; H01L29/51
Abstract:
An integrated circuit with a thick TiN metal gate with a work function greater than 4.85 eV and with a thin TiN metal gate with a work function less than 4.25 eV. An integrated circuit with a replacement gate PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a replacement gate NMOS TiN metal gate transistor with a workfunction less than 4.25 eV. An integrated circuit with a gate first PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a gate first NMOS TiN metal gate transistor with a workfunction less than 4.25 eV.
Public/Granted literature
- US20150287643A1 HIGH-K / METAL GATE CMOS TRANSISTORS WITH TiN GATES Public/Granted day:2015-10-08
Information query
IPC分类:
