- 专利标题: Dual cavity pressure structures
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申请号: US15071499申请日: 2016-03-16
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公开(公告)号: US09725305B2公开(公告)日: 2017-08-08
- 发明人: Jong Il Shin , Peter Smeys , Daesung Lee
- 申请人: InvenSense, Inc.
- 申请人地址: US CA San Jose
- 专利权人: InvenSense, Inc.
- 当前专利权人: InvenSense, Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; B81C1/00 ; B81B7/02
摘要:
Provided herein is a method including forming a trench in a handle substrate, and a trench lining is formed in the trench. A first cavity and a second cavity are formed in the handle substrate, wherein the first cavity is connected to the trench. A first MEMS structure and the handle substrate are sealed for maintaining a first pressure within the trench and the first cavity. A second MEMS structure and the handle substrate are sealed for maintaining the first pressure within the second cavity. A portion of the trench lining is exposed, and the first pressure is changed to a second pressure within the first cavity. The first cavity and the trench are sealed to maintain the second pressure within the trench and the first cavity.
公开/授权文献
- US20160272486A1 DUAL CAVITY PRESSURE STRUCTURES 公开/授权日:2016-09-22
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