Hybrid fin cut etching processes for products comprising tapered and non-tapered FinFET semiconductor devices
Abstract:
For an integrated circuit product comprising a non-tapered FinFET device formed in a first region of the substrate and a tapered FinFET device in a second region of the substrate, the method includes, among other things, forming the fins for the non-tapered FinFET device in the first region by performing a fin-cut-last process and forming the fins for the tapered FinFET by performing a fin-cut-first process.
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