Invention Grant
- Patent Title: Hybrid fin cut etching processes for products comprising tapered and non-tapered FinFET semiconductor devices
-
Application No.: US15006304Application Date: 2016-01-26
-
Publication No.: US09735060B1Publication Date: 2017-08-15
- Inventor: Min Gyu Sung , Ruilong Xie , Chanro Park , Hoon Kim
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/8234 ; H01L21/308
Abstract:
For an integrated circuit product comprising a non-tapered FinFET device formed in a first region of the substrate and a tapered FinFET device in a second region of the substrate, the method includes, among other things, forming the fins for the non-tapered FinFET device in the first region by performing a fin-cut-last process and forming the fins for the tapered FinFET by performing a fin-cut-first process.
Public/Granted literature
Information query
IPC分类:
