Invention Grant
- Patent Title: Write apparatus and magnetic memory
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Application No.: US15333235Application Date: 2016-10-25
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Publication No.: US09741418B2Publication Date: 2017-08-22
- Inventor: Yarong Fu , Junfeng Zhao , Yuangang Wang , Wei Yang , Yinyin Lin , Kai Yang
- Applicant: Huawei Technologies Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: Huawei Technologies Co., Ltd.
- Current Assignee: Huawei Technologies Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Agency: Conley Rose, P.C.
- Priority: CN201410173016 20140425
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C19/08 ; G11C11/16 ; G11B5/65 ; G11B5/012

Abstract:
A write apparatus and a magnetic memory, where the write apparatus includes a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer. A first area locates between the first information storage area and the information buffer. A second area locates between the second information storage area and the information buffer. The first information storage area, the second information storage area, and the information buffer are made of a first magnetic material. The first area and the second area are made of a second magnetic material. Magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material. The write apparatus can ensure write stability of the magnetic memory.
Public/Granted literature
- US20170040046A1 Write Apparatus and Magnetic Memory Public/Granted day:2017-02-09
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