An IGBT includes at least one first type transistor cell, including a base region, first and second emitter regions, and a body region arranged between the first emitter region and base region. The base region is arranged between the body region and second emitter region. A gate electrode adjacent the body region is dielectrically insulated from the body region by a gate dielectric. A base electrode adjacent the base region is dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A ratio between the doping concentration of the first base region section and the doping concentration of the second base region section is at least 10. The base electrode dielectric is thicker than the gate dielectric.