公开(公告)号：US09741795B2

公开(公告)日：2017-08-22

申请号：US14854396

申请日：2015-09-15

Applicant: Infineon Technologies AG

Inventor： Christian Philipp Sandow ,  Hans-Joachim Schulze ,  Johannes Georg Laven ,  Franz-Josef Niedernostheide ,  Frank Pfirsch ,  Hans-Peter Felsl

IPC: H01L29/10 ,  H01L29/739 ,  H01L29/40 ,  H01L29/423 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/1095 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397

Abstract: An IGBT includes at least one first type transistor cell, including a base region, first and second emitter regions, and a body region arranged between the first emitter region and base region. The base region is arranged between the body region and second emitter region. A gate electrode adjacent the body region is dielectrically insulated from the body region by a gate dielectric. A base electrode adjacent the base region is dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A ratio between the doping concentration of the first base region section and the doping concentration of the second base region section is at least 10. The base electrode dielectric is thicker than the gate dielectric.

公开(公告)号：US20160005818A1

公开(公告)日：2016-01-07

申请号：US14854396

申请日：2015-09-15

Applicant: Infineon Technologies AG

Inventor： Christian Philipp Sandow ,  Hans-Joachim Schulze ,  Johannes Georg Laven ,  Franz-Josef Niedernostheide ,  Frank Pfirsch ,  Hans-Peter Felsl

IPC: H01L29/10 ,  H01L29/739

CPC classification number: H01L29/1095 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397

Abstract: An IGBT includes at least one first type transistor cell, including a base region, first and second emitter regions, and a body region arranged between the first emitter region and base region. The base region is arranged between the body region and second emitter region. A gate electrode adjacent the body region is dielectrically insulated from the body region by a gate dielectric. A base electrode adjacent the base region is dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A ratio between the doping concentration of the first base region section and the doping concentration of the second base region section is at least 10. The base electrode dielectric is thicker than the gate dielectric.

Abstract translation: IGBT包括至少一个第一类型晶体管单元，包括基极区，第一和第二发射极区以及布置在第一发射极区和基极区之间的体区。 基部区域布置在体区和第二发射区之间。 邻近体区的栅电极通过栅极电介质与体区绝缘绝缘。 与基极相邻的基极通过基极电介质与基极区域介电绝缘。 基极区域具有邻接基极电介质的第一基极区域和布置在第二发射极区域与第一基极区域之间的第二基极区域区域。 第一基极区域的掺杂浓度与第二基极区域的掺杂浓度之比至少为10.基极电介质比栅极电介质厚。

公开(公告)号：US09166027B2

公开(公告)日：2015-10-20

申请号：US14041094

申请日：2013-09-30

Applicant: Infineon Technologies AG

Inventor： Christian Philipp Sandow ,  Hans-Joachim Schulze ,  Johannes Georg Laven ,  Franz-Josef Niedernostheide ,  Frank Pfirsch ,  Hans-Peter Felsl

IPC: H01L29/739

CPC classification number: H01L29/1095 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397

Abstract: An IGBT includes at least one first type transistor cell, including a base region, a first emitter region, a body region, and a second emitter region. The body region is arranged between the first emitter region and the base region. The base region is arranged between the body region and the second emitter region. The IGBT further includes a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a base electrode adjacent the base region and dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A doping concentration of the first base region section is higher than a doping concentration of the second base region section.

Abstract translation: IGBT包括至少一个第一类型晶体管单元，其包括基极区，第一发射区，体区和第二发射极区。 体区布置在第一发射区和基区之间。 基部区域布置在主体区域和第二发射区域之间。 IGBT还包括与主体区域相邻并且通过栅极电介质与体区电介绝缘的栅极电极和与基极区域相邻并且与基极区域由基极电介质电介质绝缘的基极。 基极区域具有邻接基极电介质的第一基极区域和布置在第二发射极区域与第一基极区域之间的第二基极区域区域。 第一基极区域的掺杂浓度高于第二基极区域的掺杂浓度。

公开(公告)号：US20150091053A1

公开(公告)日：2015-04-02

申请号：US14041094

申请日：2013-09-30

Applicant: Infineon Technologies AG

Inventor： Christian Philipp Sandow ,  Hans-Joachim Schulze ,  Johannes Georg Laven ,  Franz-Josef Niedernostheide ,  Frank Pfirsch ,  Hans-Peter Felsl

IPC: H01L29/739

CPC classification number: H01L29/1095 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397

Abstract: An IGBT includes at least one first type transistor cell, including a base region, a first emitter region, a body region, and a second emitter region. The body region is arranged between the first emitter region and the base region. The base region is arranged between the body region and the second emitter region. The IGBT further includes a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a base electrode adjacent the base region and dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A doping concentration of the first base region section is higher than a doping concentration of the second base region section.

Abstract translation: IGBT包括至少一个第一类型晶体管单元，其包括基极区，第一发射区，体区和第二发射极区。 体区布置在第一发射区和基区之间。 基部区域布置在主体区域和第二发射区域之间。 IGBT还包括与主体区域相邻并且通过栅极电介质与体区电介绝缘的栅电极和与基极区域相邻并且与基极区域由基极电介质介电绝缘的基极。 基极区域具有邻接基极电介质的第一基极区域和布置在第二发射极区域与第一基极区域之间的第二基极区域区域。 第一基极区域的掺杂浓度高于第二基极区域的掺杂浓度。