Invention Grant
- Patent Title: Method of forming semiconductor device
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Application No.: US15406355Application Date: 2017-01-13
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Publication No.: US09755046B2Publication Date: 2017-09-05
- Inventor: Shih-Yin Hsiao , Ching-Chung Yang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: CN201510251397 20150518
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/76 ; H01L31/062 ; H01L29/66 ; H01L29/78 ; H01L21/265 ; H01L21/311
Abstract:
A method of forming a semiconductor device is provided. At least two shallow trenches are formed in a substrate. An insulating layer is formed on surfaces of the substrate and the shallow trenches. A conductive layer is formed on the substrate between the shallow trenches. At least one spacer is formed on a sidewall of the conductive layer, wherein the spacer fills up each shallow trench.
Public/Granted literature
- US20170125547A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2017-05-04
Information query
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