Invention Grant
- Patent Title: Semiconductor devices including fin bodies with varied epitaxial layers
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Application No.: US15138914Application Date: 2016-04-26
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Publication No.: US09773908B2Publication Date: 2017-09-26
- Inventor: Dongwoo Kim , Seunghun Lee , Sunjung Kim , Hyunjung Lee , Bonyoung Koo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward and Smith, P.A.
- Priority: KR10-2015-0059166 20150427
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/78 ; H01L29/08 ; H01L29/165
Abstract:
A semiconductor device can include a substrate and a fin body that protrudes from a surface of the substrate. The fin body can include a lower portion having a first lattice structure and an upper portion, separated from the lower portion by a boundary, the upper portion having a second lattice structure that is different than the first lattice structure. An epitaxially grown epitxial layer can be on the lower and upper portions.
Public/Granted literature
- US20160315193A1 SEMICONDUCTOR DEVICES INCLUDING FIN BODIES WITH VARIED EPITAXIAL LAYERS Public/Granted day:2016-10-27
Information query
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