Invention Grant
- Patent Title: Hybrid fin cutting processes for FinFET semiconductor devices
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Application No.: US14726712Application Date: 2015-06-01
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Publication No.: US09779960B2Publication Date: 2017-10-03
- Inventor: Ruilong Xie , Min Gyu Sung , Catherine B. Labelle
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/311
- IPC: H01L21/311 ; B23P15/00 ; C03C25/00 ; C23F1/00 ; H01L21/308
Abstract:
One illustrative method disclosed herein includes, among other things, forming a fin-removal masking layer comprised of a plurality of line-type features, each of which is positioned above one of the fins, and a masking material positioned at least between adjacent features of the fin-removal masking layer and above portions of an insulating material in the trenches between the fins. The method also includes performing an anisotropic etching process through the fin-removal masking layer to remove the portions of the fins to be removed.
Public/Granted literature
- US20160351411A1 HYBRID FIN CUTTING PROCESSES FOR FINFET SEMICONDUCTOR DEVICES Public/Granted day:2016-12-01
Information query
IPC分类:
