Invention Grant
- Patent Title: Memory cell pillar including source junction plug
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Application No.: US14536021Application Date: 2014-11-07
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Publication No.: US09780102B2Publication Date: 2017-10-03
- Inventor: Fatma Arzum Simsek-Ege , Krishna K. Parat , Luan C. Tran , Meng-Wei Kuo , Yushi Hu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/11524 ; H01L27/1157 ; H01L27/11582 ; H01L27/11556 ; H01L21/822 ; H01L27/11578 ; H01L27/11529 ; H01L27/1158
Abstract:
Some embodiments include apparatuses and methods having a source material, a dielectric material over the source material, a select gate material over the dielectric material, a memory cell stack over the select gate material, a conductive plug located in an opening of the dielectric material and contacting a portion of the source material, and a channel material extending through the memory cell stack and the select gate material and contacting the conductive plug.
Public/Granted literature
- US20160133638A1 MEMORY CELL PILLAR INCLUDING SOURCE JUNCTION PLUG Public/Granted day:2016-05-12
Information query
IPC分类:
