- 专利标题： Integrated circuit device having an interfacial layer and method of manufacturing the same
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申请号： US14955205申请日： 2015-12-01
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公开(公告)号： US09786761B2公开(公告)日： 2017-10-10
- 发明人: Dong-soo Lee , Hu-yong Lee , Won-keun Chung , Hoon-joo Na , Taek-soo Jeon , Sang-jin Hyun
- 申请人： Dong-soo Lee , Hu-yong Lee , Won-keun Chung , Hoon-joo Na , Taek-soo Jeon , Sang-jin Hyun
- 申请人地址： KR Gyeonggi-Do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2015-0056008 20150421
- 主分类号： B82Y10/00
- IPC分类号： B82Y10/00 ; H01L29/51 ; H01L27/092 ; H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/06
摘要：
An integrated circuit device includes a substrate including an active region, an interfacial layer including a lower insulating layer on the active region, the lower insulating layer doped with a chalcogen element having an atomic weight equal to or greater than 16, a gate insulation layer on the interfacial layer, and a gate electrode on the gate insulation layer.
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