Invention Grant
- Patent Title: Integrated circuit device having an interfacial layer and method of manufacturing the same
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Application No.: US14955205Application Date: 2015-12-01
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Publication No.: US09786761B2Publication Date: 2017-10-10
- Inventor: Dong-soo Lee , Hu-yong Lee , Won-keun Chung , Hoon-joo Na , Taek-soo Jeon , Sang-jin Hyun
- Applicant: Dong-soo Lee , Hu-yong Lee , Won-keun Chung , Hoon-joo Na , Taek-soo Jeon , Sang-jin Hyun
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0056008 20150421
- Main IPC: B82Y10/00
- IPC: B82Y10/00 ; H01L29/51 ; H01L27/092 ; H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/06
Abstract:
An integrated circuit device includes a substrate including an active region, an interfacial layer including a lower insulating layer on the active region, the lower insulating layer doped with a chalcogen element having an atomic weight equal to or greater than 16, a gate insulation layer on the interfacial layer, and a gate electrode on the gate insulation layer.
Public/Granted literature
- US20160315165A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-10-27
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